FJ

Fumihiko Jobe

HO Hosiden: 1 patents #14 of 38Top 40%
OP Osaka Prefecture: 1 patents #1 of 13Top 8%
Overall (2005): #201,224 of 245,428Top 85%
1
Patents 2005

Issued Patents 2005

Showing 1–1 of 1 patents

Patent #TitleCo-InventorsDate
6927144 Method for manufacturing buried insulating layer type single crystal silicon carbide substrate Katsutoshi Izumi, Motoi Nakao, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai +1 more 2005-08-09