Issued Patents 2004
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6836423 | Single level metal memory cell using chalcogenide cladding | Manzur Gill | 2004-12-28 |
| 6825109 | Methods of fabricating buried digit lines | — | 2004-11-30 |
| 6815705 | Electrically programmable memory element with raised pore | Patrick Klersy | 2004-11-09 |
| 6813177 | Method and system to store information | Ward Parkinson | 2004-11-02 |
| 6795338 | Memory having access devices using phase change material such as chalcogenide | Ward Parkinson | 2004-09-21 |
| 6790663 | Methods of contacting lines and methods of forming an electrical contact in a semiconductor device | Robert Kerr, Brian M. Shirley, Luan C. Tran | 2004-09-14 |
| 6791107 | Silicon on insulator phase change memory | Manzur Gill | 2004-09-14 |
| 6787401 | Method of making vertical diode structures | Fernando Gonzalez, Trung T. Doan, Raymond A. Turi, Graham R. Wolstenholme | 2004-09-07 |
| 6784046 | Method of making vertical diode structures | Fernando Gonzalez, Trung T. Doan, Raymond A. Turi, Graham R. Wolstenholme | 2004-08-31 |
| 6784502 | Method of forming contacts, methods of contacting lines, methods of operating integrated circuitry, and integrated circuits | Robert Kerr, Brian M. Shirley, Luan C. Tran | 2004-08-31 |
| 6780740 | Method for fabricating a floating gate semiconductor device | Trung T. Doan | 2004-08-24 |
| 6774388 | Modified contact for programmable devices | Stephen J. Hudgens | 2004-08-10 |
| 6770531 | Adhesive material for programmable device | Sean Lee, Huei-Min Ho | 2004-08-03 |
| 6768665 | Refreshing memory cells of a phase change material memory device | Ward Parkinson | 2004-07-27 |
| 6764934 | Semiconductor processing methods of forming contact openings, methods of forming memory circuitry, methods of forming electrical connections, and methods of forming dynamic random | Pai-Hung Pan, Luan C. Tran | 2004-07-20 |
| 6764897 | Method of making programmable resistance memory element | Stephen J. Hudgens, Patrick Klersy | 2004-07-20 |
| 6764894 | Elevated pore phase-change memory | — | 2004-07-20 |
| 6757190 | Single level metal memory cell using chalcogenide cladding | — | 2004-06-29 |
| 6753243 | SEMICONDUCTOR PROCESSING METHODS OF FORMING CONTACT OPENINGS, METHODS OF FORMING MEMORY CIRCUITRY, METHODS OF FORMING ELECTRICAL CONNECTIONS, AND METHODS OF FORMING DYNAMIC RANDOM ACCESS MEMORY (DRAM) CIRCUITRY | Pai-Hung Pan, Luan C. Tran | 2004-06-22 |
| 6750079 | Method for making programmable resistance memory element | Patrick Klersy, Stephen J. Hudgens, Jon Maimon | 2004-06-15 |
| 6750091 | Diode formation method | Fernando Gonzalez, Trung T. Doan, Raymond A. Turi, Graham R. Wolstenholme | 2004-06-15 |
| 6747286 | Pore structure for programmable device | — | 2004-06-08 |
| 6740552 | Method of making vertical diode structures | Fernando Gonzalez, Trung T. Doan, Raymond A. Turi, Graham R. Wolstenholme | 2004-05-25 |
| 6687153 | Programming a phase-change material memory | — | 2004-02-03 |
| 6673700 | Reduced area intersection between electrode and programming element | Charles H. Dennison, Guy Wicker, Stephen J. Hudgens, Chien-Chih Chiang, Daniel Xu | 2004-01-06 |