Issued Patents 2004
Showing 1–4 of 4 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6815310 | Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel | Brian S. Doyle | 2004-11-09 |
| 6809017 | Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication | Reza Arghavani, Robert S. Chau, Mark L. Doczy | 2004-10-26 |
| 6740913 | MOS transistor using mechanical stress to control short channel effects | Brian S. Doyle | 2004-05-25 |
| 6717213 | Creation of high mobility channels in thin-body SOI devices | Brian S. Doyle | 2004-04-06 |