Issued Patents 1997
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5698870 | High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal | Kenichi Nakano, Christopher A. Bozada, Tony K. Quach, Gregory C. DeSalvo, G. David Via +4 more | 1997-12-16 |
| 5698900 | Field effect transistor device with single layer integrated metal and retained semiconductor masking | Christopher A. Bozada, Tony K. Quach, Kenichi Nakano, Gregory C. DeSalvo, G. David Via +4 more | 1997-12-16 |
| 5594262 | Elevated temperature gallium arsenide field effect transistor with aluminum arsenide to aluminum gallium arsenide mole fractioned buffer layer | Hyong-yong Lee, Belinda Johnson, Rocky Reston, Chris Ito, Gerald Trombley | 1997-01-14 |