AN

Akio Nakagawa

KT Kabushiki Kaisha Toshiba: 5 patents #18 of 1,730Top 2%
Fujitsu Limited: 1 patents #640 of 2,531Top 30%
📍 Yokohama, MA: #1 of 13 inventorsTop 8%
Overall (1997): #2,987 of 185,788Top 2%
6
Patents 1997

Issued Patents 1997

Showing 1–6 of 6 patents

Patent #TitleCo-InventorsDate
5688702 Process of making a semiconductor device using a silicon-on-insulator substrate Kazuyoshi Furukawa, Tsuneo Ogura, Katsujiro Tanzawa 1997-11-18
5689121 Insulated-gate semiconductor device Mitsuhiko Kitagawa, Ichiro Omura, Norio Yasuhara, Tomoki Inoue 1997-11-18
5640040 High breakdown voltage semiconductor device Norio Yasuhara, Tomoko Matsudai, Yoshihiro Yamaguchi, Ichiro Omura, Hideyuki Funaki 1997-06-17
5637909 Semiconductor device and method of manufacturing the same Hiroomi Nakajima, Yasuhiro Katsumata, Hiroshi Iwai, Toshihiko Iinuma, Kazumi Inou +3 more 1997-06-10
5606689 Data processing apparatus including external storage previously reserved to be allocated to job groups 1997-02-25
5592014 High breakdown voltage semiconductor device Hideyuki Funaki, Norio Yasuhara, Tomoko Matsudai, Yoshihiro Yamaguchi, Ichiro Omura 1997-01-07