Issued Patents 1997
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5686322 | Process for doping two levels of a double poly bipolar transistor after formation of second poly layer | — | 1997-11-11 |
| 5668397 | High frequency analog transistors, method of fabrication and circuit implementation | Christopher K. Davis, George Bajor, Thomas L. Crandell, Taewon Jung, Anthony L. Rivoli | 1997-09-16 |
| 5665634 | Method of increasing maximum terminal voltage of a semiconductor device | — | 1997-09-09 |
| 5652153 | Method of making JFET structures for semiconductor devices with complementary bipolar transistors | — | 1997-07-29 |
| 5650658 | Integration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process steps | — | 1997-07-22 |
| 5643821 | Method for making ohmic contact to lightly doped islands from a silicide buried layer and applications | — | 1997-07-01 |
| 5622890 | Method of making contact regions for narrow trenches in semiconductor devices | Dustin A. Woodbury | 1997-04-22 |
| 5622878 | Method of making an integration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process steps | — | 1997-04-22 |
| 5614422 | Process for doping two levels of a double poly bipolar transistor after formation of second poly layer | — | 1997-03-25 |
| 5602052 | Method of forming dummy island capacitor | — | 1997-02-11 |
| 5602054 | Method for formation of a well in a dielectrically isolated island | — | 1997-02-11 |