Issued Patents 1989
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4888062 | Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % | Katsumi Nakagawa, Masahiro Kanai, Shunichi Ishihara, Kozo Arao, Akira Sakai +1 more | 1989-12-19 |
| 4887134 | Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded | Keishi Saito | 1989-12-12 |
| 4851302 | Functional ZnSe:H deposited films | Katsumi Nakagawa, Shunichi Ishihara, Kozo Arao, Akira Sakai, Masahiro Kanai | 1989-07-25 |
| 4845001 | Light receiving member for use in electrophotography with a surface layer comprising non-single-crystal material containing tetrahedrally bonded boron nitride | Tetsuya Takei, Keishi Saito, Tatsuyuki Aoike | 1989-07-04 |
| 4824749 | Light receiving member for use in electrophotography and process for the production thereof | Shigeru Shirai, Keishi Saito, Takayoshi Arai, Minoru Kato | 1989-04-25 |
| 4818655 | Electrophotographic light receiving member with surface layer of a-(Si.sub.x C.sub.1-x).sub.y :H.sub.1-y wherein x is 0.1-0.99999 and y is 0.3-0.59 | Shigeru Shirai, Keishi Saito, Takayoshi Arai, Minoru Kato | 1989-04-04 |
| 4804604 | Light receiving member for use in electrophotography | Shigeru Shirai, Keishi Saito, Takayoshi Arai, Minoru Kato | 1989-02-14 |