Issued Patents 1989
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4888062 | Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % | Katsumi Nakagawa, Shunichi Ishihara, Kozo Arao, Yasushi Fujioka, Akira Sakai +1 more | 1989-12-19 |
| 4869931 | Method for forming deposited films of group II-VI compounds | Masaaki Hirooka, Jun-Ichi Hanna, Isamu Shimizu | 1989-09-26 |
| 4868014 | Method for forming thin film multi-layer structure member | Masaaki Hirooka, Jun-Ichi Hanna, Isamu Shimizu | 1989-09-19 |
| 4853251 | Process for forming deposited film including carbon as a constituent element | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1989-08-01 |
| 4851302 | Functional ZnSe:H deposited films | Katsumi Nakagawa, Shunichi Ishihara, Kozo Arao, Yasushi Fujioka, Akira Sakai | 1989-07-25 |
| 4830890 | Method for forming a deposited film from a gaseous silane compound heated on a substrate and introducing an active species therewith | — | 1989-05-16 |
| 4818563 | Process for forming deposited film | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1989-04-04 |
| 4801468 | Process for forming deposited film | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1989-01-31 |
| 4800173 | Process for preparing Si or Ge epitaxial film using fluorine oxidant | Junichi Hanna, Isamu Shimizu | 1989-01-24 |