ZH

Zhuqing Huang

YC Yangtze Memory Technologies Co.: 1 patents #419 of 626Top 70%
Overall (All Time): #2,817,882 of 4,157,543Top 70%
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Patent #TitleCo-InventorsDate
10790297 Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layer Baoyou Chen, Weihua Cheng, Hai Huang, Guanping Wu, Hongbin Zhu +1 more 2020-09-29