BY

Brian R. York

WT Western Digital Technologies: 33 patents #50 of 3,180Top 2%
HG HGST: 19 patents #75 of 1,677Top 5%
IBM: 6 patents #16,453 of 70,183Top 25%
HB Hgst Netherlands, B.V.: 4 patents #198 of 972Top 25%
TT Tokyo Institute Of Technology: 3 patents #141 of 1,159Top 15%
ST Sandisk Technologies: 1 patents #1,320 of 2,224Top 60%
XS X-Ray Optical Systems: 1 patents #26 of 50Top 55%
📍 San Jose, CA: #619 of 32,062 inventorsTop 2%
🗺 California: #5,035 of 386,348 inventorsTop 2%
Overall (All Time): #33,211 of 4,157,543Top 1%
65
Patents All Time

Issued Patents All Time

Showing 26–50 of 65 patents

Patent #TitleCo-InventorsDate
11694713 BiSb topological insulator with novel buffer layer that promotes a BiSb (012) orientation Quang Le, Cherngye Hwang, Thao A. Nguyen, Zheng Gao, Kuok San Ho +1 more 2023-07-04
11682420 Seed layer for spin torque oscillator in microwave assisted magnetic recording device James Mac Freitag, Zheng Gao, Susumu Okamura 2023-06-20
11532323 BiSbX (012) layers having increased operating temperatures for SOT and MRAM devices Quang Le, Cherngye Hwang, Susumu Okamura, Xiaoyong Liu, Kuok San Ho +1 more 2022-12-20
11495741 Bismuth antimony alloys for use as topological insulators Cherngye Hwang, Alan SPOOL, Michael A. Gribelyuk, Quang Le 2022-11-08
11489108 BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation Quang Le, Cherngye Hwang, Andrew Chen, Thao A. Nguyen, Yongchul Ahn +4 more 2022-11-01
11127420 Seed layer for spin torque oscillator in microwave assisted magnetic recording device James Mac Freitag, Zheng Gao, Susumu Okamura 2021-09-21
11094338 SOT film stack for differential reader Cherngye Hwang, Xiaoyong Liu, Quang Le, Kuok San Ho, Hisashi Takano 2021-08-17
10229723 Spin orbit torque magnetoresistive random access memory containing composite spin hall effect layer including beta phase tungsten Young-Suk Choi, Neil Smith 2019-03-12
9805747 Method for making a perpendicular magnetic recording write head with write pole having thin side gaps and thicker leading gap April Hixson-Goldsmith, Ning Shi, Kyusik Shin, Suping Song 2017-10-31
9040180 Perpendicular magnetic recording disk with multiple magnetic layers and intermediate dual nucleation films for control of grain size Ernesto E. Marinero, Dieter K. Weller 2015-05-26
8988824 Method for manufacturing a magnetic write pole with a consistent bevel angle Elizabeth Brinkman, Ning Shi, Sue Siyang Zhang 2015-03-24
8760804 Substrate nitrogen plasma treatment for softer CoFe main pole writer formation Elizabeth Brinkman, Ning Shi 2014-06-24
8611053 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a Heusler alloy Elizabeth Brinkman, Matthew J. Carey, Jeffrey R. Childress, Young-Suk Choi 2013-12-17
8320232 Patterned perpendicular magnetic recording medium with multiple magnetic layers and interlayers Ernesto E. Marinero, Dieter K. Weller 2012-11-27
8213131 Read sensors with improved orientation of the hard bias layer and having a nanocrystalline seed layer Yongjian Sun 2012-07-03
8107202 Magnetoresistive sensor with novel pinned layer structure Wen-Yaung Lee, Chang-Man Park, Alexander M. Zeltser 2012-01-31
7855861 Insulator barrier for noise reduction of a TMR magnetic transducer Peter M. Dang, Eric W. Flint, Daryl J. Pocker, Yongjian Sun, Jila Tabib 2010-12-21
7833640 Intermediate tri-layer structure for perpendicular recording media Ernesto E. Marinero, Natacha Supper 2010-11-16
7770282 Method of making a magnetic sensing device having an insulator structure Alexander M. Zeltser, Jinshan Li 2010-08-10
7722967 Recording medium comprising laminated underlayer structures Ernesto E. Marinero 2010-05-25
7703194 Method for creating write element having high magnetic moment Co-Fe-O-N film with soft magnetic properties Brian E. Brusca, Joel Forrest, Richard Hsiao, James Jarratt 2010-04-27
7675717 Magnetic read head having increased electron exchange Wen-Yaung Lee, Jinshan Li, Daniele Mauri 2010-03-09
7672094 TMR sensor having an under-layer treated with nitrogen for increased magnetoresistance Thomas E. Shatz, Dulip Ajantha Welipitiya 2010-03-02
7573685 GMR sensor having a capping layer treated with nitrogen for increased magnetoresistance Wen-Yaung Lee, Thomas E. Shatz, Dulip Ajantha Welipitiya 2009-08-11
7433162 Magnetoresistive sensor with antiferromagnetic exchange-coupled structure formed by use of chemical-ordering enhancement layer Matthew J. Carey 2008-10-07