Issued Patents All Time
Showing 26–37 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6888184 | Shielded magnetic ram cells | Xizeng Shi, Hua-Ching Tong, Kyusik Sin | 2005-05-03 |
| 6829160 | Magnetic ram cell with amplification circuitry and MRAM memory array formed using the MRAM cells | Quiqun (Kevin) Qi, Xizeng Shi | 2004-12-07 |
| 6801411 | Dual stripe spin valve sensor without antiferromagnetic pinning layer | Marcos M. Lederman | 2004-10-05 |
| 6735850 | Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication | Kenneth E. Knapp, Ronald A. Barr, Benjamin P. Law, James Spallas, Ming Zhao | 2004-05-18 |
| 6721138 | Inductive transducer with stitched pole tip and pedestal defining zero throat height | Yingjian Chen, Xizeng Shi, Hugh C. Hiner, Zi-Wen Dong, Francis H. Liu +4 more | 2004-04-13 |
| 6721203 | Designs of reference cells for magnetic tunnel junction (MTJ) MRAM | Qiuqun Qi, Xizeng Shi | 2004-04-13 |
| 6707083 | Magnetic tunneling junction with improved power consumption | Hugh C. Hiner, Kyusik Sin, Xizeng Shi | 2004-03-16 |
| 6697294 | Designs of reference cells for magnetic tunnel junction (MTJ) MRAM | Qiuqun Qi, Xizeng Shi | 2004-02-24 |
| 6487056 | Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication | Kenneth E. Knapp, Ronald A. Barr, Benjamin P. Law, James Spallas, Ming Zhao | 2002-11-26 |
| 6421212 | Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication | Kenneth E. Knapp, Ronald A. Barr, Benjamin P. Law, James Spallas, Ming Zhao | 2002-07-16 |
| 6418000 | Dual, synthetic spin valve sensor using current pinning | Marcos M. Lederman | 2002-07-09 |
| 6317297 | Current pinned dual spin valve with synthetic pinned layers | Hua-Ching Tong, Xizeng Shi, Subrata Dey | 2001-11-13 |