Issued Patents All Time
Showing 1–25 of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8022506 | SOI device with more immunity from substrate voltage | — | 2011-09-20 |
| 7790589 | Method of providing enhanced breakdown by diluted doping profiles in high-voltage transistors | Paulus J. T. Eggenkamp, Priscilla Boos, Maarten Jacobus Swanenberg, Rob Van Dalen, Anco Heringa | 2010-09-07 |
| 7459750 | Integrated half-bridge power circuit | Jacob Antonius Van Der Pol, Raymond J. Grover | 2008-12-02 |
| 7061059 | Semiconductor device | Constantinus Paulus Meeuwsen | 2006-06-13 |
| 6933559 | LDMOS with guard ring (of same type as drain) surrounding the drain | Raymond Van Roijen, Johannes Hendrik Hermanus Alexius Egbers, Anco Heringa | 2005-08-23 |
| 6608351 | Semiconductor device comprising a high-voltage circuit element | Constantinus Paulus Meeuwsen, Hendrik Gezienus Albert Huizing | 2003-08-19 |
| 6597044 | Semiconductor device having a charge removal facility for minority carriers | Constantinus Paulus Meeuwsen | 2003-07-22 |
| 6288424 | Semiconductor device having LDMOS transistors and a screening layer | — | 2001-09-11 |
| 6160304 | Semiconductor device comprising a half-bridge circuit | — | 2000-12-12 |
| 5998845 | Semiconductor device having increased safe operating range | — | 1999-12-07 |
| 5976942 | Method of manufacturing a high-voltage semiconductor device | — | 1999-11-02 |
| 5910670 | Semiconductor device with improved breakdown voltage characteristics | — | 1999-06-08 |
| 5883413 | Lateral high-voltage DMOS transistor with drain zone charge draining | — | 1999-03-16 |
| 5796146 | Semiconductor device having a lateral insulated gate biopolar transistor | — | 1998-08-18 |
| 5786252 | Method of manufacturing a semiconductor device, and semiconductor device manufactured by such a method | Maarten van Dort | 1998-07-28 |
| 5747841 | Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement | — | 1998-05-05 |
| 5610432 | Semiconductor device with a fast lateral dmost provided with a high-voltage source electrode | — | 1997-03-11 |
| 5473180 | Semiconductor device with an MOST provided with an extended drain region for high voltages | — | 1995-12-05 |
| 5412234 | Integrated semiconductor circuit having improved breakdown voltage characteristics | Franciscus A. C. M. Schoofs | 1995-05-02 |
| 5347155 | Semiconductor device having a lateral DMOST with breakdown voltage raising zones and provisions for exchanging charge with the back gate region | — | 1994-09-13 |
| 5324978 | Semiconductor device having an improved breakdown voltage-raising structure | Franciscus A. C. M. Schoofs | 1994-06-28 |
| 4987469 | Lateral high-voltage transistor suitable for use in emitter followers | — | 1991-01-22 |
| 4952998 | Integrated circuit with complementary MOS transistors | — | 1990-08-28 |
| 4908551 | DC/AC bridge circuit | Job F. P. van Mil, Franciscus A. C. M. Schoofs | 1990-03-13 |
| 4750028 | Semiconductor device having floating semiconductor zones | — | 1988-06-07 |