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MRAM structure with contact plug protruding out of contact hole and method of fabricating the same |
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Semiconductor structure and method for forming the same |
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Semiconductor device and method for fabricating the same |
Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang +4 more |
2025-03-25 |
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Slot filling using a zero shot model for conversational AI systems and applications |
Shubhadeep Das, Oluwatobi Olabiyi, Zhilin Wang |
2025-02-25 |
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Magnetoresistive random access memory |
Hui-Lin Wang, Ying-Cheng Liu, Yi-An Shih, Chen-Yi Weng, Chin-Yang Hsieh +3 more |
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Magnetoresistive random access memory and method of manufacturing the same |
Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Ying-Cheng Liu, Yi-An Shih +10 more |
2024-10-29 |
$558,000 |
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Semiconductor device and method for fabricating the same |
Chiu-Jung Chiu, Ya-Sheng Feng, I-Ming Tseng, Yi-An Shih, Yu-Chun Chen +2 more |
2024-08-13 |
$1,018,000 |
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Semiconductor structure and method for forming the same |
Hui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Ying-Cheng Liu +4 more |
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$466,000 |
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Semiconductor device and method for fabricating the same |
Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang +4 more |
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Double-sided display device |
Kuan-Chou Chen, Yung-Chih CHENG |
2024-03-12 |
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Semiconductor device and method for fabricating the same |
Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang +4 more |
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$1,222,000 |
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Magnetoresistive random access memory and method of manufacturing the same |
Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Ying-Cheng Liu, Yi-An Shih +10 more |
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$1,068,000 |
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Semiconductor device and method for fabricating the same |
Chiu-Jung Chiu, Ya-Sheng Feng, I-Ming Tseng, Yi-An Shih, Yu-Chun Chen +2 more |
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$754,000 |
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MRAM semiconductor structure and method of forming the same |
Hui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Ying-Cheng Liu +4 more |
2023-05-09 |
$1,331,000 |
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Semiconductor device and method for fabricating the same |
Chiu-Jung Chiu, Ya-Sheng Feng, I-Ming Tseng, Yi-An Shih, Yu-Chun Chen +2 more |
2022-11-29 |
$1,695,000 |
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Semiconductor device and method for fabricating the same |
Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang +4 more |
2022-11-22 |
$1,070,000 |
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Magnetoresistive random access memory |
Yu-Chun Chen, Yen-Chun Liu, Ya-Sheng Feng, Chiu-Jung Chiu, I-Ming Tseng +3 more |
2022-10-18 |
$632,000 |
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Magnetoresistive random access memory and method of manufacturing the same |
Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Ying-Cheng Liu, Yi-An Shih +10 more |
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$1,622,000 |
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Semiconductor structure and method for forming the same |
Hui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Ying-Cheng Liu +4 more |
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Magnetoresistive random-access memory |
I-Ming Tseng, Chiu-Jung Chiu, Chung-Liang Chu, Yu-Chun Chen, Ya-Sheng Feng +3 more |
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Method of manufacturing power device with improved the utilization rate of wafer area |
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2021-07-13 |
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Semiconductor device and method for fabricating the same |
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$2,872,000 |
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Magnetoresistive random access memory with particular shape of dielectric layer |
Hui-Lin Wang, Chen-Yi Weng, Ying-Cheng Liu, Chin-Yang Hsieh, Yi-An Shih +3 more |
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$2,117,000 |
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Magnetoresistive random access memory |
Hui-Lin Wang, Ying-Cheng Liu, Yi-An Shih, Chen-Yi Weng, Chin-Yang Hsieh +3 more |
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$2,021,000 |