Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8431460 | Method for fabricating semiconductor device | Shin-Chuan Huang, Guang-Yaw Hwang, Yu-Hsiang Hung, I-Chang Wang | 2013-04-30 |
| 8076210 | Method for fabricating metal-oxide semiconductor transistors | Tsai-Fu Hsiao, Ching-I Li, Po-Yuan Chen, Chun-An Lin, Chao-Chun Chen +1 more | 2011-12-13 |
| 8053847 | Method for fabricating metal-oxide semiconductor transistors | Tsai-Fu Hsiao, Ching-I Li, Po-Yuan Chen, Chun-An Lin, Chao-Chun Chen +1 more | 2011-11-08 |
| 7795101 | Method of forming a MOS transistor | Chin-Cheng Chien, Tsai-Fu Hsiao, Ming-Yen Chien, Chao-Chun Chen | 2010-09-14 |
| 7473606 | Method for fabricating metal-oxide semiconductor transistors | Tsai-Fu Hsiao, Ching-I Li, Po-Yuan Chen, Chun-An Lin, Chao-Chun Chen +1 more | 2009-01-06 |
| 7435658 | Method of manufacturing metal-oxide-semiconductor transistor | Yu-Ren Wang, Chin-Cheng Chien, Neng-Hui Yang | 2008-10-14 |
| 7396717 | Method of forming a MOS transistor | Chin-Cheng Chien, Tsai-Fu Hsiao, Ming-Yen Chien, Chao-Chun Chen | 2008-07-08 |
| 7176504 | SiGe MOSFET with an erosion preventing Six1Gey1 layer | Huan-Shun Lin, Hung-Lin Shih, Jih-Shun Chiang, Min Fan | 2007-02-13 |
| 7071046 | Method of manufacturing a MOS transistor | Neng-Hui Yang, Huan-Shun Lin | 2006-07-04 |
| 7060547 | Method for forming a junction region of a semiconductor device | Yu Chen, Neng-Hui Yang, Chin-Cheng Chien | 2006-06-13 |
| 6943085 | Method of manufacturing metal-oxide-semiconductor transistor | Yu-Ren Wang, Chin-Cheng Chien, Neng-Hui Yang | 2005-09-13 |
| 6815770 | MOS transistor having reduced source/drain extension sheet resistance | Chin-Cheng Chien, Yu Chen, Neng-Hui Yang | 2004-11-09 |