Issued Patents All Time
Showing 26–39 of 39 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5725674 | Device and method for epitaxially growing gallium nitride layers | Richard J. Molnar | 1998-03-10 |
| 5686738 | Highly insulating monocrystalline gallium nitride thin films | — | 1997-11-11 |
| 5677538 | Photodetectors using III-V nitrides | Mira S. Misra | 1997-10-14 |
| 5633192 | Method for epitaxially growing gallium nitride layers | Richard J. Molnar | 1997-05-27 |
| 5385862 | Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films | — | 1995-01-31 |
| 5296119 | Defect-induced control of the structure of boron nitride | — | 1994-03-22 |
| 4739383 | Optical detector and amplifier based on tandem semiconductor devices | Paul H. Maruska, Michael C. Hicks | 1988-04-19 |
| 4533450 | Control of the hydrogen bonding in reactively sputtered amorphous silicon | — | 1985-08-06 |
| 4528082 | Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers | H. Paul Maruska | 1985-07-09 |
| 4508609 | Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets | H. Paul Maruska | 1985-04-02 |
| 4417092 | Sputtered pin amorphous silicon semi-conductor device and method therefor | Robert A. Friedman | 1983-11-22 |
| 4407710 | Hybrid method of making an amorphous silicon P-I-N semiconductor device | Don L. Morel, Benjamin Abeles | 1983-10-04 |
| 4285762 | Plasma etching of amorphous silicon (SE-35) | — | 1981-08-25 |
| 4251289 | Gradient doping in amorphous silicon | Robert A. Friedman, Christopher R. Wronski | 1981-02-17 |