YE

Youngmin EEH

Toshiba Memory: 15 patents #53 of 1,971Top 3%
SH Sk Hynix: 8 patents #946 of 4,849Top 20%
KT Kabushiki Kaisha Toshiba: 6 patents #4,898 of 21,451Top 25%
Kioxia: 4 patents #355 of 1,813Top 20%
Overall (All Time): #105,408 of 4,157,543Top 3%
33
Patents All Time

Issued Patents All Time

Showing 26–33 of 33 patents

Patent #TitleCo-InventorsDate
9269890 Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer Masahiko Nakayama, Toshihiko Nagase, Tadashi Kai, Koji Ueda, Yutaka Hashimoto +2 more 2016-02-23
9252357 Magnetoresistive element Daisuke Watanabe, Kazuya SAWADA, Koji Ueda, Toshihiko Nagase 2016-02-02
9209386 Magneto-resistive element having a ferromagnetic layer containing boron Makoto Nagamine, Koji Ueda, Daisuke Watanabe, Kazuya SAWADA, Toshihiko Nagase 2015-12-08
9184374 Magnetoresistive element Kazuya SAWADA, Toshihiko Nagase, Koji Ueda, Daisuke Watanabe, Masahiko Nakayama +2 more 2015-11-10
9178137 Magnetoresistive element and magnetic memory Katsuya Nishiyama, Daisuke Ikeno, Toshihiko Nagase, Tadashi Kai, Daisuke Watanabe 2015-11-03
9142756 Tunneling magnetoresistive element having a high MR ratio Makoto Nagamine, Koji Ueda, Daisuke Watanabe, Kazuya SAWADA, Toshihiko Nagase 2015-09-22
9130143 Magnetic memory and method for manufacturing the same Toshihiko Nagase, Daisuke Watanabe, Kazuya SAWADA, Koji Ueda, Hiroaki Yoda 2015-09-08
8995181 Magnetoresistive element Daisuke Watanabe, Kazuya SAWADA, Koji Ueda, Toshihiko Nagase 2015-03-31