KS

Kazuya SAWADA

Toshiba Memory: 24 patents #22 of 1,971Top 2%
SH Sk Hynix: 14 patents #532 of 4,849Top 15%
Kioxia: 13 patents #67 of 1,813Top 4%
KT Kabushiki Kaisha Toshiba: 7 patents #4,294 of 21,451Top 25%
SO Sony: 1 patents #17,262 of 25,231Top 70%
📍 Seoul, KR: #803 of 39,741 inventorsTop 3%
Overall (All Time): #49,879 of 4,157,543Top 2%
52
Patents All Time

Issued Patents All Time

Showing 26–50 of 52 patents

Patent #TitleCo-InventorsDate
10388343 Magnetoresistive element and magnetic memory Tadaaki Oikawa, Young Min EEH, Kenichi Yoshino, Toshihiko Nagase, Daisuke Watanabe 2019-08-20
10325640 Magnetoresistive memory device with different write pulse patterns Tatsuya Kishi, Tsuneo Inaba, Daisuke Watanabe, Masahiko Nakayama, Nobuyuki Ogata +5 more 2019-06-18
10263178 Magnetic memory device Toshihiko Nagase, Youngmin EEH, Daisuke Watanabe, Kenichi Yoshino, Tadaaki Oikawa +1 more 2019-04-16
10203380 Electronic device Ku-Youl Jung, Guk-Cheon Kim, Toshihiko Nagase, Daisuke Watanabe, Won-Joon Choi +1 more 2019-02-12
10199568 Magnetic storage device and manufacturing method of magnetic storage device Makoto Nagamine, Young Min EEH, Daisuke Watanabe, Toshihiko Nagase 2019-02-05
10170519 Magnetoresistive element and memory device Youngmin EEH, Toshihiko Nagase, Daisuke Watanabe, Koji Ueda, Makoto Nagamine 2019-01-01
10170691 Electronic device and method for fabricating the same Jong-Koo Lim, Won-Joon Choi, Guk-Cheon Kim, Yang-Kon Kim, Ku-Youl Jung +4 more 2019-01-01
10103318 Magnetoresistive element Daisuke Watanabe, Yang-Kon Kim, Makoto Nagamine, Youngmin EEH, Koji Ueda +4 more 2018-10-16
10090459 Magnetoresistive element Daisuke Watanabe, Youngmin EEH, Koji Ueda, Toshihiko Nagase 2018-10-02
10026891 Magnetoresistive element Toshihiko Nagase, Tadashi Kai, Youngmin EEH, Koji Ueda, Daisuke Watanabe +1 more 2018-07-17
9991313 Magnetic memory and manufacturing method of the same Daisuke Watanabe, Makoto Nagamine, Youngmin EEH, Koji Ueda, Toshihiko Nagase +5 more 2018-06-05
9947859 Electronic device and method for fabricating the same Cha Deok Dong, Daisuke Watanabe, Young Min EEH, Koji Ueda, Toshihiko Nagase 2018-04-17
9947862 Magnetoresistive memory device Daisuke Watanabe, Toshihiko Nagase, Youngmin EEH, Makoto Nagamine, Tadaaki Oikawa +2 more 2018-04-17
9741928 Magnetoresistive element and magnetic random access memory Koji Ueda, Toshihiko Nagase, Youngmin EEH, Daisuke Watanabe, Hiroaki Yoda 2017-08-22
9705076 Magnetoresistive element and manufacturing method of the same Makoto Nagamine, Youngmin EEH, Koji Ueda, Daisuke Watanabe, Toshihiko Nagase +1 more 2017-07-11
9640584 Method of manufacturing a magnetoresistive memory device Makoto Nagamine, Youngmin EEH, Koji Ueda, Daisuke Watanabe, Toshihiko Nagase 2017-05-02
9620561 Magnetoresistive element and manufacturing method thereof Toshihiko Nagase, Daisuke Watanabe, Youngmin EEH, Koji Ueda, Makoto Nagamine 2017-04-11
9529714 Electronic device Yang-Kon Kim, Bo-Mi Lee, Won-Joon Choi, Guk-Cheon Kim, Daisuke Watanabe +4 more 2016-12-27
9461240 Magnetoresistive memory device Toshihiko Nagase, Youngmin EEH, Koji Ueda, Daisuke Watanabe, Makoto Nagamine 2016-10-04
9293695 Magnetoresistive element and magnetic random access memory Koji Ueda, Toshihiko Nagase, Youngmin EEH, Daisuke Watanabe, Hiroaki Yoda 2016-03-22
9269890 Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer Masahiko Nakayama, Toshihiko Nagase, Tadashi Kai, Youngmin EEH, Koji Ueda +2 more 2016-02-23
9252357 Magnetoresistive element Daisuke Watanabe, Youngmin EEH, Koji Ueda, Toshihiko Nagase 2016-02-02
9209386 Magneto-resistive element having a ferromagnetic layer containing boron Makoto Nagamine, Youngmin EEH, Koji Ueda, Daisuke Watanabe, Toshihiko Nagase 2015-12-08
9184374 Magnetoresistive element Toshihiko Nagase, Youngmin EEH, Koji Ueda, Daisuke Watanabe, Masahiko Nakayama +2 more 2015-11-10
9142756 Tunneling magnetoresistive element having a high MR ratio Makoto Nagamine, Youngmin EEH, Koji Ueda, Daisuke Watanabe, Toshihiko Nagase 2015-09-22