KM

Kenji Maeguchi

TO Toshiba: 7 patents #92 of 2,688Top 4%
KT Kabushiki Kaisha Toshiba: 1 patents #13,537 of 21,451Top 65%
Overall (All Time): #670,697 of 4,157,543Top 20%
8
Patents All Time

Issued Patents All Time

Showing 1–8 of 8 patents

Patent #TitleCo-InventorsDate
5061983 Semiconductor device having a metal silicide layer connecting two semiconductors Hideharu Egawa, Yoshio Nishi 1991-10-29
4619037 Method of manufacturing a semiconductor device Shinji Taguchi, Homare Matsumura 1986-10-28
4564583 Method for manufacturing a semiconductor device 1986-01-14
4498224 Method of manufacturing a MOSFET using accelerated ions to form an amorphous region 1985-02-12
4491856 Semiconductor device having contacting but electrically isolated semiconductor region and interconnection layer of differing conductivity types Hideharu Egawa, Yoshio Nishi 1985-01-01
4463492 Method of forming a semiconductor device on insulating substrate by selective amorphosization followed by simultaneous activation and reconversion to single crystal state 1984-08-07
4447823 SOS p--n Junction device with a thick oxide wiring insulation layer Hiroyuki Tango 1984-05-08
4395726 Semiconductor device of silicon on sapphire structure having FETs with different thickness polycrystalline silicon films 1983-07-26