Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9537087 | Magnetoresistance sensor with perpendicular anisotropy | Zhongming Zeng, Kang L. Wang | 2017-01-03 |
| 9520552 | DIOMEJ cell device | Kang L. Wang | 2016-12-13 |
| 9520443 | Systems and methods for implementing magnetoelectric junctions | Kang L. Wang | 2016-12-13 |
| 9450020 | Multiple-bits-per-cell voltage-controlled magnetic memory | — | 2016-09-20 |
| 9355699 | Voltage-controlled magnetic anisotropy (VCMA) switch and magneto-electric memory (MERAM) | Kang L. Wang, Kosmas Galatsis | 2016-05-31 |
| 9343658 | Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques | Kang L. Wang, Guoqiang Yu, Pramey Upadhyaya | 2016-05-17 |
| 9324403 | Voltage-controlled magnetic anisotropy (VCMA) switch and magneto-electric memory (MERAM) | Kang L. Wang, Kosmas Galatsis | 2016-04-26 |
| 9129691 | Voltage-controlled magnetic anisotropy (VCMA) switch and magneto-electric memory (MeRAM) | Kang L. Wang, Kosmas Galatsis | 2015-09-08 |
| 9099641 | Systems and methods for implementing magnetoelectric junctions having improved read-write characteristics | Kang L. Wang | 2015-08-04 |
| 9036407 | Voltage-controlled magnetic memory element with canted magnetization | Kang L. Wang, Juan G. Alzate | 2015-05-19 |
| 8988923 | Nonvolatile magneto-electric random access memory circuit with burst writing and back-to-back reads | Richard Dorrance, Dejan Markovic, Kang L. Wang | 2015-03-24 |
| 8841739 | Systems and methods for implementing magnetoelectric junctions | Kang L. Wang | 2014-09-23 |