Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5434438 | Random access memory cell with a capacitor | — | 1995-07-18 |
| 5168075 | Random access memory cell with implanted capacitor region | — | 1992-12-01 |
| 4827448 | Random access memory cell with implanted capacitor region | — | 1989-05-02 |
| 4613889 | Random access MOS/memory cell with capacitor and transistor formed in recess | — | 1986-09-23 |
| 4561004 | High density, electrically erasable, floating gate memory cell | Shyh-Chang Tsaur | 1985-12-24 |
| 4554643 | Electrically erasable programmable MNOS read only memory | — | 1985-11-19 |
| 4536941 | Method of making high density dynamic memory cell | Shyh-Chang Tsaur | 1985-08-27 |
| 4467450 | Random access MOS memory cell using double level polysilicon | — | 1984-08-21 |
| 4390971 | Post-metal programmable MOS read only memory | — | 1983-06-28 |
| 4386286 | High current static MOS output buffer circuit for power-down mode of operation | — | 1983-05-31 |
| 4385432 | Closely-spaced double level conductors for MOS read only | Shyh-Chang Tsaur | 1983-05-31 |
| 4384399 | Method of making a metal programmable MOS read only memory device | — | 1983-05-24 |
| 4377818 | High density electrically programmable ROM | Shyh-Chang Tsaur | 1983-03-22 |
| 4376983 | High density dynamic memory cell | Shyh-Chang Tsaur | 1983-03-15 |
| 4372031 | Method of making high density memory cells with improved metal-to-silicon contacts | Shyh-Chang Tsaur | 1983-02-08 |
| 4342099 | Electrically erasable programmable MNOS read only memory | — | 1982-07-27 |
| 4342100 | Implant programmable metal gate MOS read only memory | — | 1982-07-27 |
| 4317272 | High density, electrically erasable, floating gate memory cell | Shyh-Chang Tsaur | 1982-03-02 |
| 4294001 | Method of making implant programmable metal gate MOS read only memory | — | 1981-10-13 |
| 4290184 | Method of making post-metal programmable MOS read only memory | — | 1981-09-22 |
| 4258466 | High density electrically programmable ROM | Shyh-Chang Tsaur | 1981-03-31 |
| 4240092 | Random access memory cell with different capacitor and transistor oxide thickness | — | 1980-12-16 |
| 4230504 | Method of making implant programmable N-channel ROM | — | 1980-10-28 |
| 4225945 | Random access MOS memory cell using double level polysilicon | — | 1980-09-30 |
| 4198693 | VMOS Read only memory | — | 1980-04-15 |