TS

Tomoyuki Sasaki

Tdk: 196 patents #2 of 3,796Top 1%
Sumitomo Electric Industries: 4 patents #6,367 of 21,551Top 30%
NT Nagaoka University Of Technology: 3 patents #11 of 81Top 15%
NI Nissan Chemical Industries: 3 patents #451 of 1,150Top 40%
UH University Of Hyogo: 3 patents #5 of 36Top 15%
PA Panasonic: 2 patents #9,678 of 21,108Top 50%
DC Daifuku Co.: 2 patents #146 of 509Top 30%
KT Kabushiki Kaisha Toshiba: 2 patents #9,982 of 21,451Top 50%
GL Glory: 1 patents #217 of 385Top 60%
FC Fujimori Kogyo Co.: 1 patents #43 of 112Top 40%
UY University Of Yamanashi: 1 patents #62 of 152Top 45%
WT Western Digital Technologies: 1 patents #1,787 of 3,180Top 60%
AP Akita Prefecture: 1 patents #4 of 32Top 15%
Overall (All Time): #2,895 of 4,157,543Top 1%
213
Patents All Time

Issued Patents All Time

Showing 126–150 of 213 patents

Patent #TitleCo-InventorsDate
10629231 Magnetoresistance effect element 2020-04-21
10622048 Method for stabilizing spin element and method for manufacturing spin element Yohei Shiokawa 2020-04-14
10622548 Magnetoresistance effect element 2020-04-14
10613162 Ferromagnetic multilayer film, magnetoresistance effect element, and method for manufacturing ferromagnetic multilayer film Yoshitomo Tanaka 2020-04-07
10615336 Magnetoresistance effect element 2020-04-07
10614866 Magnetoresistance effect element, magnetic memory, and magnetic device Yohei Shiokawa, Jiro Yoshinari 2020-04-07
10607898 Tunnel magnetoresistive effect element, magnetic memory, and built-in memory Zhenyao Tang 2020-03-31
10593867 Spin current magnetization rotational element, method of manufacturing the same, magnetoresistance effect element, and magnetic memory Yohei Shiokawa, Tohru Oikawa 2020-03-17
10593868 Spin current magnetization rotating element, magnetoresistive effect element and magnetic memory Yohei Shiokawa 2020-03-17
10593388 Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory Yohei Shiokawa 2020-03-17
10586916 Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory Yohei Shiokawa 2020-03-10
10580974 Magnetoresistance effect element 2020-03-03
10580470 Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory Yohei Shiokawa 2020-03-03
10573804 Magnetoresistance effect element 2020-02-25
10573449 Tunnel magnetoresistive effect element 2020-02-25
10574215 Random number generator, random number generation device, neuromorphic computer, and quantum computer Jiro Yoshinari, Yohei Shiokawa 2020-02-25
10564229 Tunnel magnetoresistive effect element, magnetic memory, and built-in memory 2020-02-18
10553299 Magnetic domain wall type analog memory element, magnetic domain wall type analog memory, nonvolatile logic circuit, and magnetic neuro-element 2020-02-04
10522742 Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory Yohei Shiokawa 2019-12-31
10522592 Tunnel magnetoresistive effect element, magnetic memory, and built-in memory Yoshitomo Tanaka 2019-12-31
10510948 Magnetoresistive effect element, magnetic memory, magnetization rotation method, and spin current magnetization rotational element 2019-12-17
10497417 Spin current assisted magnetoresistance effect device Tohru Oikawa 2019-12-03
10490731 Spin current magnetization rotational element, magnetoresistance effect element and magnetic memory Tohru Oikawa 2019-11-26
10490249 Data writing method, inspection method, spin device manufacturing method, and magnetoresistance effect element Yohei Shiokawa 2019-11-26
10490734 Magnetoresistance effect device 2019-11-26