FC

Feng-Ching Chu

TSMC: 44 patents #763 of 12,232Top 7%
Overall (All Time): #66,364 of 4,157,543Top 2%
44
Patents All Time

Issued Patents All Time

Showing 26–44 of 44 patents

Patent #TitleCo-InventorsDate
11575047 Semiconductor device active region profile and method of forming the same Wei-Yang Lee, Chia-Pin Lin 2023-02-07
11569386 Method for forming semiconductor device structure with cap layer Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen 2023-01-31
11515211 Cut EPI process and structures Wei-Yang Lee, Chia-Pin Lin 2022-11-29
11508736 Method for forming different types of devices Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen 2022-11-22
11502005 Semiconductor devices and methods of forming the same Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen 2022-11-15
11328960 Semiconductor structure with gate-all-around devices and stacked FinFET devices Wei-Yang Lee, Chia-Pin Lin 2022-05-10
11217490 Source/drain features with an etch stop layer Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen 2022-01-04
11107735 Methods of forming epitaxial structures in fin-like field effect transistors Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen 2021-08-31
11088245 Integrated circuit device with source/drain barrier Wei-Yang Lee, Yen-Ming Chen, Feng-Cheng Yang 2021-08-10
10991630 Semiconductor device and method Tzu-Ching Lin, Chien-Chih Lin, Tuoh Bin Ng 2021-04-27
10879395 Method for forming semiconductor device structure with cap layer Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen 2020-12-29
10867861 Fin field-effect transistor device and method of forming the same Tzu-Ching Lin, Chien-Chih Lin, Li-Li Su, Chii-Horng Li 2020-12-15
10756171 Integrated circuit device with source/drain barrier Wei-Yang Lee, Yen-Ming Chen, Feng-Cheng Yang 2020-08-25
10748820 Source/drain features with an etch stop layer Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen 2020-08-18
10522420 Source/drain features with an etch stop layer Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen 2019-12-31
10522680 Finfet semiconductor device structure with capped source drain structures Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen 2019-12-31
10497628 Methods of forming epitaxial structures in fin-like field effect transistors Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen 2019-12-03
10403551 Source/drain features with an etch stop layer Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen 2019-09-03
10217815 Integrated circuit device with source/drain barrier Wei-Yang Lee, Yen-Ming Chen, Feng-Cheng Yang 2019-02-26