Issued Patents All Time
Showing 26–50 of 86 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12211749 | Cut EPI process and structures | Feng-Ching Chu, Wei-Yang Lee | 2025-01-28 |
| 12191369 | Source and drain engineering process for multigate devices | Po-Yu Lin, Wei-Yang Lee, Tzu-Hua Chiu, Kuan-Hao Cheng, Wei-Han Fan +2 more | 2025-01-07 |
| 12191370 | Semiconductor device with tunable channel layer usage and methods of fabrication thereof | Bo-Yu Lai, Wei-Yang Lee, Ming-Lung Cheng, Yuan-Ching Peng | 2025-01-07 |
| 12191379 | Multi-gate semiconductor device with inner spacer and fabrication method thereof | Bone-Fong Wu, Chih-Hao Yu | 2025-01-07 |
| 12142647 | Self-aligning backside contact process and devices thereof | Wei-Han Fan, Wei-Yang Lee, Tzu-Hua Chiu | 2024-11-12 |
| 12125889 | Source/drain contact with low-k contact etch stop layer and method of fabricating thereof | Ting-Yeh Chen, Wei-Yang Lee, Da-Wen Lin | 2024-10-22 |
| 12087842 | Inner spacer features for multi-gate transistors | Bone-Fong Wu, Chih-Hao Yu | 2024-09-10 |
| 12087837 | Semiconductor device with backside contact and methods of forming such | Ting-Yeh Chen, Yen-Ting Chen, Wei-Yang Lee | 2024-09-10 |
| 12080759 | Transistor source/drain regions and methods of forming the same | Yan-Ting Lin, Wei-Jen Lai, Chien-I Kuo, Wei-Yuan Lu, Yee-Chia Yeo | 2024-09-03 |
| 12080775 | Semiconductor device and forming method thereof | Wen-Kai Lin, Shih-Chiang Chen, Po-Shao Lin, Wei-Yang Lee, Yuan-Ching Peng | 2024-09-03 |
| 12051732 | Semiconductor structure and method for forming the same | Kuan-Hao Cheng, Wei-Yang Lee, Tzu-Hua Chiu, Wei-Han Fan, Po-Yu Lin | 2024-07-30 |
| 12040407 | Semiconductor devices including backside vias and methods of forming the same | Che-Lun Chang, Wei-Yang Lee, Yuan-Ching Peng | 2024-07-16 |
| 12027626 | Semiconductor device active region profile and method of forming the same | Feng-Ching Chu, Wei-Yang Lee | 2024-07-02 |
| 12021133 | Inner spacer liner | Jin-Mu Yin, Wei-Yang Lee, Chih-Hao Yu, Yen-Ting Chen | 2024-06-25 |
| 12015090 | Lightly-doped channel extensions | Wei-Jen Lai, Wei-Yuan Lu, Chih-Hao Yu | 2024-06-18 |
| 12015060 | Structure and formation method of semiconductor device with backside contact | Feng-Ching Chu, Wei-Yang Lee | 2024-06-18 |
| 12002845 | Method of manufacturing a semiconductor device and a semiconductor device | Ting-Yeh Chen, Wei-Yang Lee, Yuan-Ching Peng | 2024-06-04 |
| 11973122 | Nano-FET semiconductor device and method of forming | I-Hsieh Wong, Wei-Yang Lee | 2024-04-30 |
| 11935781 | Integrated circuit structure with backside dielectric layer having air gap | Che-Lun Chang, Wei-Yang Lee, Yuan-Ching Peng | 2024-03-19 |
| 11923409 | Epitaxial structures exposed in airgaps for semiconductor devices | Po-Yu Lin, Wei-Yang Lee, Tzu-Hua Chiu, Kuan-Hao Cheng, Wei-Han Fan +2 more | 2024-03-05 |
| 11901236 | Semiconductor structure with gate-all-around devices and stacked FinFET devices | Feng-Ching Chu, Wei-Yang Lee | 2024-02-13 |
| 11855225 | Semiconductor device with epitaxial bridge feature and methods of forming the same | Ting-Yeh Chen, Wei-Yang Lee | 2023-12-26 |
| 11855220 | Method and structure for air gap inner spacer in gate-all-around devices | Shih-Chiang Chen, Wei-Yang Lee, Yuan-Ching Peng | 2023-12-26 |
| 11799002 | Semiconductor devices and methods of forming the same | Yen-Po Lin, Wei-Yang Lee, Yuan-Ching Peng, Jiun-Ming Kuo | 2023-10-24 |
| 11791402 | Semiconductor device having strained channels | Wei-Jen Lai, Wei-Yuan Lu | 2023-10-17 |