Issued Patents All Time
Showing 26–37 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7795086 | Method of manufacturing semiconductor device using salicide process | Young Jin Lee, Dong Sun Sheen, Mi-Ri Lee, Chi-Ho Kim, Gil Jae Park +1 more | 2010-09-14 |
| 7687355 | Method for manufacturing fin transistor that prevents etching loss of a spin-on-glass insulation layer | Dong Sun Sheen, Young-Ho Lee | 2010-03-30 |
| 7687362 | Semiconductor device with increased channel length and width and method for manufacturing the same | Dong Sun Sheen, Young-Ho Lee | 2010-03-30 |
| 7687371 | Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formation | Dong Sun Sheen, Sang Tae Ahn, Hyeon Ju An | 2010-03-30 |
| 7655534 | Method of forming fin transistor | Dong Sun Sheen, Sang Tae Ahn, Hyun-Chul Sohn | 2010-02-02 |
| 7655533 | Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the same | Dong Sun Sheen, Sang Tae Ahn, Hyeon Ju An | 2010-02-02 |
| 7585730 | Method of fabricating a non-volatile memory device | Dong Sun Sheen, Young Jin Lee, Mi-Ri Lee, Chi-Ho Kim, Gil Jae Park +1 more | 2009-09-08 |
| 7563654 | Method of manufacturing semiconductor device for formation of pin transistor | Dong Sun Sheen, Sang Tae Ahn, Hyeon Ju An, Hyun-Chul Sohn | 2009-07-21 |
| 7538007 | Semiconductor device with flowable insulation layer formed on capacitor and method for fabricating the same | Sang Tae Ahn, Dong Sun Sheen, Jong-Han Shin | 2009-05-26 |
| 7501687 | Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formation | Dong Sun Sheen, Sang Tae Ahn, Hyeon Ju An | 2009-03-10 |
| 7166519 | Method for isolating semiconductor devices with use of shallow trench isolation method | Sang Tae Ahn, Dong Sun Sheen | 2007-01-23 |
| 7087515 | Method for forming flowable dielectric layer in semiconductor device | Sang Tae Ahn, Dong Sun Sheen | 2006-08-08 |