Issued Patents All Time
Showing 26–42 of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7662705 | Partial implantation method for semiconductor manufacturing | Kyoung Bong Rouh, Yong-Sun Sohn | 2010-02-16 |
| 7563673 | Method of forming gate structure of semiconductor device | Young Bog Kim, Jun Soo Chang, Yong Seok Eun | 2009-07-21 |
| 7554106 | Partial ion implantation apparatus and method using bundled beam | Kyoung Bong Rouh, Seung Woo Jin, Yong Soo Jung | 2009-06-30 |
| 7538003 | Method for fabricating MOS transistor | Kyoung Bong Rouh, Yong Soo Joung | 2009-05-26 |
| 7529116 | Memory device having a threshold voltage switching device and a method for storing information in the memory device | Yong Soo Jung | 2009-05-05 |
| 7511337 | Recess gate type transistor | Kyoung Bong Rouh, Seung Woo Jin, Yong Soo Jung | 2009-03-31 |
| 7488959 | Apparatus and method for partial ion implantation | Yong Soo Jung, Seung Woo Jin, Kyoung Bong Rouh | 2009-02-10 |
| 7442946 | Nonuniform ion implantation apparatus and method using a wide beam | — | 2008-10-28 |
| 7365406 | Non-uniform ion implantation apparatus and method thereof | Kyoung Bong Rouh, Seung Woo Jin | 2008-04-29 |
| 7351627 | Method of manufacturing semiconductor device using gate-through ion implantation | Seung Woo Jin, Kyoung Bong Rouh | 2008-04-01 |
| 7332772 | Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the same | Kyoung Bong Rouh, Seung Woo Seung | 2008-02-19 |
| 7279691 | Ion implantation apparatus and method for implanting ions by using the same | Kyoung Bong Rouh, Seung Woo Jin | 2007-10-09 |
| 7186631 | Method for manufacturing a semiconductor device | Seung Woo Jin, Kyoung Bong Rouh | 2007-03-06 |
| 7060610 | Method for forming contact in semiconductor device | — | 2006-06-13 |
| 7049248 | Method for manufacturing semiconductor device | Dong Su Park | 2006-05-23 |
| 6974745 | Method of manufacturing semiconductor device | Yong Seok Eun | 2005-12-13 |
| 6951795 | Method for fabricating capacitor using metastable-polysilicon process | Hoon-Jung Oh, Jong Min Lee | 2005-10-04 |