Issued Patents All Time
Showing 26–50 of 89 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7053403 | Iridium oxide nanostructure | Gregory M. Stecker, Robert Barrowcliff, Sheng Teng Hsu | 2006-05-30 |
| 7041511 | Pt/PGO etching process for FeRAM applications | Bruce D. Ulrich, Lisa Stecker, Sheng Teng Hsu | 2006-05-09 |
| 7029982 | Method of affecting RRAM characteristics by doping PCMO thin films | Wei-Wei Zhuang, David R. Evans, Sheng Teng Hsu | 2006-04-18 |
| 7029924 | Buffered-layer memory cell | Sheng Teng Hsu, Tingkai Li, Wei Pan, Wei-Wei Zhuang, David R. Evans +1 more | 2006-04-18 |
| 7022621 | Iridium oxide nanostructure patterning | Gregory M. Stecker, Robert Barrowcliff, Sheng Teng Hsu | 2006-04-04 |
| 7009231 | Single-phase c-axis doped PGO ferroelectric thin films | Wei-Wei Zhuang, Jong-Jan Lee, Sheng Teng Hsu | 2006-03-07 |
| 6998661 | Integrated circuit structure including electrodes with PGO ferroelectric thin film thereon | Jer-Shen Maa, Wei-Wei Zhuang, Sheng Teng Hsu | 2006-02-14 |
| 6991942 | MFIS ferroelectric memory array on SOI and method of making same | Sheng Teng Hsu, Tingkai Li | 2006-01-31 |
| 6972238 | Oxygen content system and method for controlling memory resistance properties | Sheng Teng Hsu | 2005-12-06 |
| 6955992 | One mask PT/PCMO/PT stack etching process for RRAM applications | Sheng Teng Hsu | 2005-10-18 |
| 6949435 | Asymmetric-area memory cell | Sheng Teng Hsu | 2005-09-27 |
| 6921671 | Buffer layers to enhance the C-axis growth of Bi4Ti3O12 thin film on high temperature iridium-composite electrode | Wei-Wei Zhuang, Sheng Teng Hsu | 2005-07-26 |
| 6911361 | Low temperature processing of PCMO thin film on Ir substrate for RRAM application | Wei-Wei Zhuang, Wei Pan, Sheng Teng Hsu | 2005-06-28 |
| 6906366 | Single transistor ferroelectric transistor structure with high-k insulator | Sheng Teng Hsu | 2005-06-14 |
| 6897074 | Method for making single-phase c-axis doped PGO ferroelectric thin films | Wei-Wei Zhuang, Jong-Jan Lee, Sheng Teng Hsu | 2005-05-24 |
| 6849891 | RRAM memory cell electrodes | Sheng Teng Hsu, Wei Pan, Wei-Wei Zhuang, Tingkai Li | 2005-02-01 |
| 6849564 | 1R1D R-RAM array with floating p-well | Sheng Teng Hsu, Wei Pan, Wei-Wei Zhuang | 2005-02-01 |
| 6833572 | Electrode materials with improved hydrogen degradation resistance | Tingkai Li, Hong Ying, Yoshi Ono, Sheng Teng Hsu | 2004-12-21 |
| 6819583 | Ferroelectric resistor non-volatile memory array | Sheng Teng Hsu, Tingkai Li | 2004-11-16 |
| 6774004 | Nano-scale resistance cross-point memory array | Sheng Teng Hsu, Wei-Wei Zhuang, Wei Pan | 2004-08-10 |
| 6774054 | High temperature annealing of spin coated Pr1-xCaxMnO3 thim film for RRAM application | Wei-Wei Zhuang, David R. Evans, Sheng Teng Hsu | 2004-08-10 |
| 6762063 | Method of fabricating non-volatile ferroelectric transistors | Sheng Teng Hsu, Tingkai Li | 2004-07-13 |
| 6759250 | Deposition method for lead germanate ferroelectric structure with multi-layered electrode | Tingkai Li, Sheng Teng Hsu | 2004-07-06 |
| 6759252 | Method and device using titanium doped aluminum oxide for passivation of ferroelectric materials | Sheng Teng Hsu, Hong Ying | 2004-07-06 |
| 6737693 | Ferroelastic integrated circuit device | Tingkai Li, Yoshi Ono, Sheng Teng Hsu | 2004-05-18 |