Issued Patents All Time
Showing 51–75 of 82 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7115945 | Strained silicon fin structure | Jong-Jan Lee, Sheng Teng Hsu, Jer-Shen Maa | 2006-10-03 |
| 7071042 | Method of fabricating silicon integrated circuit on glass | Jer-Shen Maa, Sheng Teng Hsu, Jong-Jan Lee | 2006-07-04 |
| 7067430 | Method of making relaxed silicon-germanium on insulator via layer transfer with stress reduction | Jer-Shen Maa, Jong-Jan Lee, Sheng Teng Hsu | 2006-06-27 |
| 7045832 | Vertical optical path structure for infrared photodetection | Jong-Jan Lee, Jer-Shen Maa, Sheng Teng Hsu | 2006-05-16 |
| 7045401 | Strained silicon finFET device | Jong-Jan Lee, Sheng Teng Hsu, Jer-Shen Maa | 2006-05-16 |
| 7037856 | Method of fabricating a low-defect strained epitaxial germanium film on silicon | Jer-Shen Maa, Jong-Jan Lee, Sheng Teng Hsu | 2006-05-02 |
| 7030002 | Low temperature anneal to reduce defects in hydrogen-implanted, relaxed SiGe layer | Jong-Jan Lee, Jer-Shen Maa | 2006-04-18 |
| 7018882 | Method to form local “silicon-on-nothing” or “silicon-on-insulator” wafers with tensile-strained silicon | Sheng Teng Hsu, Jer-Shen Maa | 2006-03-28 |
| 7008813 | Epitaxial growth of germanium photodetector for CMOS imagers | Jong-Jan Lee, Jer-Shen Maa, Sheng Teng Hsu | 2006-03-07 |
| 6992025 | Strained silicon on insulator from film transfer and relaxation by hydrogen implantation | Jer-Shen Maa, Jong-Jan Lee, David R. Evans, Allen Burmaster, Sheng Teng Hsu | 2006-01-31 |
| 6967112 | Three-dimensional quantum dot structure for infrared photodetection | Jer-Shen Maa, Jong-Jan Lee, Sheng Teng Hsu | 2005-11-22 |
| 6903384 | System and method for isolating silicon germanium dislocation regions in strained-silicon CMOS applications | Sheng Teng Hsu, Jong-Jan Lee, Jer-Shen Maa | 2005-06-07 |
| 6852652 | Method of making relaxed silicon-germanium on glass via layer transfer | Jer-Shen Maa, Jong-Jan Lee, Steve Droes | 2005-02-08 |
| 6793731 | Method for recrystallizing an amorphized silicon germanium film overlying silicon | Sheng Teng Hsu, Jong-Jan Lee, Jer-Shen Maa | 2004-09-21 |
| 6780796 | Method of forming relaxed SiGe layer | Jer-Shen Maa, Jong-Jan Lee, Sheng Teng Hsu | 2004-08-24 |
| 6767802 | Methods of making relaxed silicon-germanium on insulator via layer transfer | Jer-Shen Maa, Jong-Jan Lee, Sheng Teng Hsu | 2004-07-27 |
| 6759695 | Integrated circuit metal oxide semiconductor transistor | Yanjun Ma, David R. Evans | 2004-07-06 |
| 6746902 | Method to form relaxed sige layer with high ge content | Jer-Shen Maa, Sheng Teng Hsu | 2004-06-08 |
| 6720258 | Method of fabricating a nickel silicide on a substrate | Jer-Shen Maa, Yoshi Ono, Fengyan Zhang, Sheng Teng Hsu | 2004-04-13 |
| 6716691 | Self-aligned shallow trench isolation process having improved polysilicon gate thickness control | David R. Evans, Sheng Teng Hsu, Bruce D. Ulrich, Lisa Stecker | 2004-04-06 |
| 6703293 | Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates | Sheng Teng Hsu, Jer-Shen Maa, Jong-Jan Lee | 2004-03-09 |
| 6699764 | Method for amorphization re-crystallization of Si1-xGex films on silicon substrates | Jer-Shen Maa, Jong-Jan Lee, Sheng Teng Hsu | 2004-03-02 |
| 6627919 | Thermally stable nickel germanosilicide formed on SiGe | Jer-Shen Maa, Sheng Teng Hsu | 2003-09-30 |
| 6627510 | Method of making self-aligned shallow trench isolation | David R. Evans, Sheng Teng Hsu, Bruce D. Ulrich, Lisa Stecker | 2003-09-30 |
| 6620664 | Silicon-germanium MOSFET with deposited gate dielectric and metal gate electrode and method for making the same | Yanjun Ma, David R. Evans | 2003-09-16 |