MA

Masahiro Araki

Sharp Kabushiki Kaisha: 15 patents #1,103 of 10,731Top 15%
RE Renesas Electronics: 6 patents #669 of 4,529Top 15%
Kyocera: 2 patents #1,365 of 3,732Top 40%
MD Mitsubishi Electric System Lsi Design: 1 patents #31 of 98Top 35%
RT Renesas Technology: 1 patents #1,991 of 3,337Top 60%
University of California: 1 patents #8,022 of 18,278Top 45%
📍 Yokohama, CA: #140 of 287 inventorsTop 50%
Overall (All Time): #161,005 of 4,157,543Top 4%
25
Patents All Time

Issued Patents All Time

Showing 1–25 of 25 patents

Patent #TitleCo-InventorsDate
12065760 Method of manufacturing semiconductor element, semiconductor element, and substrate 2024-08-20
12051765 Method for removal of devices using a trench Takeshi Kamikawa, Srinivas Gandrothula 2024-07-30
11379072 Semiconductor device and semiconductor system having the same 2022-07-05
11360234 Electrode device, semiconductor device, and semiconductor system Takuya Mizokami 2022-06-14
10615032 Semiconductor device manufacturing method 2020-04-07
10082919 Semiconductor device 2018-09-25
9543947 Semiconductor device 2017-01-10
9257976 Semiconductor device with touch sensor circuit 2016-02-09
8963165 Nitride semiconductor structure, nitride semiconductor light emitting element, nitride semiconductor transistor element, method of manufacturing nitride semiconductor structure, and method of manufacturing nitride semiconductor element Shinya Yoshida, Haruhisa Takiguchi, Atsushi Ogawa, Takao Kinoshita, Tohru Murata +2 more 2015-02-24
8866153 Functional element and manufacturing method of same Akihiro Urata, Takaaki Utsumi, Masahiro Shiota 2014-10-21
8647904 Method for manufacturing nitride semiconductor device, nitride semiconductor light-emitting device, and light-emitting apparatus Takaaki Utsumi, Masahiko Sakata 2014-02-11
8368183 Nitride semiconductor device Eiji Yamada, Takeshi Kamikawa 2013-02-05
8350609 Semiconductor device Atsuhiko Ishibashi 2013-01-08
8288794 Nitride semiconductor layers on substrate having ridge portions with inflow prevention walls near engraved regions Takeshi Kamikawa, Eiji Yamada 2012-10-16
8030110 Nitride semiconductor light-emitting device and method for fabrication thereof Takeshi Kamikawa, Eiji Yamada, Yoshika Kaneko 2011-10-04
7903708 Nitride semiconductor light-emitting device and method for fabrication thereof Takeshi Kamikawa, Eiji Yamada, Yoshika Kaneko 2011-03-08
7772611 Nitride semiconductor device with depressed portion Takeshi Kamikawa, Eiji Yamada 2010-08-10
7663158 Nitride compound semiconductor light emitting device and method for producing the same Yoshihiro Ueta, Takayuki Yuasa, Atsushi Ogawa, Yuhzoh Tsuda 2010-02-16
7352012 Nitride compound semiconductor light emitting device and method for producing the same Yoshihiro Ueta, Takayuki Yuasa, Atsushi Ogawa, Yuhzoh Tsuda 2008-04-01
7157297 Method for fabrication of semiconductor device Takeshi Kamikawa, Eiji Yamada 2007-01-02
7064357 Nitride compound semiconductor light emitting device and method for producing the same Yoshihiro Ueta, Takayuki Yuasa, Atsushi Ogawa, Yuhzoh Tsuda 2006-06-20
7012283 Nitride semiconductor light emitting element and optical device containing it Yuhzoh Tsuda, Shigetoshi Ito 2006-03-14
6714060 Master slave flip-flop circuit functioning as edge trigger flip-flop 2004-03-30
6586777 Nitride semiconductor light emitting device Takayuki Yuasa, Atsushi Ogawa, Yoshihiro Ueta, Yuhzoh Tsuda, Mototaka Taneya 2003-07-01
6455877 III-N compound semiconductor device Atsushi Ogawa, Takayuki Yuasa, Yoshihiro Ueta, Yuhzoh Tsuda, Mototaka Taneya 2002-09-24