HY

Hae Wang Yang

S( Semiconductor Manufacturing International (Shanghai): 3 patents #213 of 1,122Top 20%
Overall (All Time): #1,557,429 of 4,157,543Top 40%
3
Patents All Time

Issued Patents All Time

Showing 1–3 of 3 patents

Patent #TitleCo-InventorsDate
8338893 Method and resulting structure DRAM cell with selected inverse narrow width effect 2012-12-25
7880263 Method and resulting structure DRAM cell with selected inverse narrow width effect 2011-02-01
7678644 Method and resulting structure for DRAM cell and peripheral transistor 2010-03-16