YT

Yasuhiko Takemura

SL Semiconductor Energy Laboratory: 533 patents #5 of 1,113Top 1%
JR Japan Synthetic Rubber: 19 patents #3 of 558Top 1%
TO Toshiba: 7 patents #92 of 2,688Top 4%
SC Semiconductor Energy Laboratories Co.: 1 patents #6 of 38Top 20%
TC Toshiba Silicone Co.: 1 patents #80 of 169Top 50%
Overall (All Time): #290 of 4,157,543Top 1%
567
Patents All Time

Issued Patents All Time

Showing 451–475 of 567 patents

Patent #TitleCo-InventorsDate
5661311 Semiconductor device and process for fabricating the same Hiroki Adachi 1997-08-26
5656825 Thin film transistor having crystalline semiconductor layer obtained by irradiation Naoto Kusumoto, Hisashi Ohtani 1997-08-12
5650338 Method for forming thin film transistor Shunpei Yamazaki, Hongyong Zhang, Hideki Uochi, Hiroki Adachi 1997-07-22
5650636 Active matrix display and electrooptical device Toshiji Hamatani, Toshimitsu Konuma, Jun Koyama, Yuji Kawasaki, Hongyong Zhang +1 more 1997-07-22
5648277 Method of manufacturing a semiconductor device Hongyong Zhang, Naoaki Yamaguchi 1997-07-15
5646424 Transistor device employing crystallization catalyst Hongyong Zhang, Toru Takayama 1997-07-08
5644147 Electro-optical device incorporating pixel transistors with plural gate electrodes Shunpei Yamazaki 1997-07-01
5641380 Method for fabricating a semiconductor device Shunpei Yamazaki, Hideomi Suzawa 1997-06-24
5639698 Semiconductor, semiconductor device, and method for fabricating the same Shunpei Yamazaki, Hongyong Zhang, Toru Takayama, Hideki Uochi 1997-06-17
5637515 Method of making thin film transistor using lateral crystallization 1997-06-10
5633519 Non-volatile floating gate semiconductor device Shunpei Yamazaki 1997-05-27
5629222 Method of forming semiconductor memory device by selectively forming an insulating film on the drain region Shunpei Yamazaki 1997-05-13
5627084 Method for fabricating MIS semiconductor device Shunpei Yamazaki 1997-05-06
5627384 Semiconductor device and method of fabricating the same Satoshi Teramoto, Hongyong Zhang 1997-05-06
5624851 Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallized and another portion is laser crystallized Toru Takayama, Hongyong Zhang 1997-04-29
5620905 Method of fabricating thin film semiconductor integrated circuit Toshimitsu Konuma, Masaaki Hiroki, Hongyong Zhang, Mutsuo Yamamoto 1997-04-15
5616935 Semiconductor integrated circuit having N-channel and P-channel transistors Jun Koyama 1997-04-01
5616506 Semiconductor device having a crystallized silicon thin film in which the crystallization direction is oriented either vertically or horizontally to the current flow direction 1997-04-01
5617243 Electro-optical system and method of displaying images Shunpei Yamazaki 1997-04-01
5614733 Semiconductor device having crystalline thin film transistors Hongyong Zhang, Toru Takayama 1997-03-25
5608232 Semiconductor, semiconductor device, and method for fabricating the same Shunpei Yamazaki, Hongyong Zhang, Toru Takayama, Hideki Uochi 1997-03-04
5608251 Thin film semiconductor integrated circuit and method of fabricating the same Toshimitsu Konuma, Masaaki Hiroki, Hongyong Zhang, Mutsuo Yamamoto 1997-03-04
5606179 Insulated gate field effect transistor having a crystalline channel region Shunpei Yamazaki 1997-02-25
5604360 Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor Hongyong Zhang, Toru Takayama, Akiharu Miyanaga 1997-02-18
5604137 Method for forming a multilayer integrated circuit Shunpei Yamazaki, Akira Mase, Hideki Uochi 1997-02-18