MN

Masaharu Nagai

SL Semiconductor Energy Laboratory: 34 patents #267 of 1,113Top 25%
SO Sony: 9 patents #4,874 of 25,231Top 20%
Overall (All Time): #70,518 of 4,157,543Top 2%
43
Patents All Time

Issued Patents All Time

Showing 26–43 of 43 patents

Patent #TitleCo-InventorsDate
7799515 Method of fabricating semiconductor device, and developing apparatus using the method Ichiro Uehara 2010-09-21
7737449 Light emitting device and method of manufacturing thereof Shunpei Yamazaki, Masayuki Sakakura, Yutaka Matsuda, Keiko Saito, Hisao Ikeda 2010-06-15
7608490 Semiconductor device and manufacturing method thereof Shunpei Yamazaki, Tetsuya Kakehata, Hideto Ohnuma, Mitsuaki Osame, Masayuki Sakakura +1 more 2009-10-27
7579220 Semiconductor device manufacturing method Hideto Ohnuma, Mitsuaki Osame, Masayuki Sakakura, Shigeki Komori, Shunpei Yamazaki 2009-08-25
7520790 Display device and manufacturing method of display device Shunpei Yamazaki, Masayuki Sakakura, Yutaka Matsuda, Kengo Akimoto, Gen Fujii +1 more 2009-04-21
7465593 Electronics device, semiconductor device, and method for manufacturing the same Shunpei Yamazaki, Osamu Nakamura 2008-12-16
7446336 Electronics device, semiconductor device, and method for manufacturing the same Shunpei Yamazaki, Osamu Nakamura 2008-11-04
7344825 Method of fabricating semiconductor device, and developing apparatus using the method Ichiro Uehara 2008-03-18
7306978 Light emitting device and method of manufacturing thereof Shunpei Yamazaki, Masayuki Sakakura, Yutaka Matsuda, Keiko Saito, Hisao Ikeda 2007-12-11
6456639 Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same Akira Ishibashi, Yoshinori Hatanaka, Toru Aoki 2002-09-24
6414975 Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including same Akira Ishibashi, Yoshinori Hatanaka, Toru Aoki 2002-07-02
6069020 Method of manufacturing semiconductor light-emitting device Eisaku Kato, Hiroyasu Noguchi 2000-05-30
6024794 Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination Koshi Tamamura, Hironori Tsukamoto 2000-02-15
6020601 Semiconductor light-emitting device Hiroyasu Noguchi, Eisaku Kato 2000-02-01
5865897 Method of producing film of nitrogen-doped II-VI group compound semiconductor Satoshi Ito, Satoshi Taniguchi, Masao Ikeda, Hiroyuki Okuyama, Hironori Tsukamoto +1 more 1999-02-02
5828086 Semiconductor light emitting device with a Mg superlattice structure Akira Ishibashi, Satoshi Matsumoto, Satoshi Ito, Shigetaka Tomiya, Kazushi Nakano +1 more 1998-10-27
5695556 Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination Koshi Tamamura, Hironori Tsukamoto, Masao Ikeda 1997-12-09
5665977 Semiconductor light emitting device with defect decomposing and blocking layers Akira Ishibashi, Satoshi Matsumoto, Satoshi Ito, Shigetaka Tomiya, Kazushi Nakano +1 more 1997-09-09