| 11335798 |
Enhancement mode MISHEMT with GaN channel regrowth under a gate area |
Peter Moens, Piet Vanmeerbeek, Abhishek Banerjee |
2022-05-17 |
| 10797152 |
Process of forming an electronic device including an access region |
Abhishek Banerjee, Piet Vanmeerbeek, Peter Moens |
2020-10-06 |
| 10797153 |
Process of forming an electronic device including an access region |
Abhishek Banerjee, Piet Vanmeerbeek, Peter Moens, Woochul Jeon, Ali Salih |
2020-10-06 |
| 9929261 |
Electronic device including a HEMT with a segmented gate electrode |
Peter Moens, Jaume Roig-Guitart, Johan Camiel Julia Janssens |
2018-03-27 |
| 8648398 |
Electronic device and a transistor including a trench and a sidewall doped region |
Jaume Roig-Guitart, Peter Moens |
2014-02-11 |
| 8298889 |
Process of forming an electronic device including a trench and a conductive structure therein |
Jaume Roig-Guitart, Peter Moens |
2012-10-30 |
| 7989886 |
Alignment of trench for MOS |
Peter Moens |
2011-08-02 |
| 7915155 |
Double trench for isolation of semiconductor devices |
Peter Moens, Sylvie Boonen, Paul Colson |
2011-03-29 |
| 7709889 |
Semiconductor device with improved breakdown properties and manufacturing method thereof |
Peter Moens, Filip Bauwens, Joris Baele |
2010-05-04 |
| 7667270 |
Double trench for isolation of semiconductor devices |
Peter Moens, Sylvie Boonen, Paul Colson |
2010-02-23 |
| 7608510 |
Alignment of trench for MOS |
Peter Moens |
2009-10-27 |