Issued Patents All Time
Showing 26–33 of 33 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7189641 | Methods of fabricating tungsten contacts with tungsten nitride barrier layers in semiconductor devices, tungsten contacts with tungsten nitride barrier layers | Sang-Woo Lee, Gil-Heyun Choi, Jong-Myeong Lee | 2007-03-13 |
| 7148100 | Methods of forming electronic devices including high-k dielectric layers and electrode barrier layers | Byung-Hee Kim, Gil-Heyun Choi, Chang-Won Lee | 2006-12-12 |
| 7105444 | Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same | Sang-Bom Kang, Seong-Geon Park, You-Kyoung Lee, Gil-Heyun Choi, Jong-Myeong Lee +1 more | 2006-09-12 |
| 7098131 | Methods for forming atomic layers and thin films including tantalum nitride and devices including the same | Sang-Bom Kang, Byung-Hee Kim, Gil-Heyun Choi, You-Kyoung Lee, Seong-Geon Park | 2006-08-29 |
| 7081409 | Methods of producing integrated circuit devices utilizing tantalum amine derivatives | Sang-Bom Kang, Jong-Myeong Lee, Gil-Heyun Choi, You-Kyoung Lee, Seong-Geon Park +1 more | 2006-07-25 |
| 7067420 | Methods for forming a metal layer on a semiconductor | Gil-Heyun Choi, Byung-Hee Kim, Sang-Bum Kang | 2006-06-27 |
| 6876078 | Semiconductor interconnection structure with TaN and method of forming the same | Byung-Hee Kim, Gil-Heyun Choi | 2005-04-05 |
| 6815285 | Methods of forming dual gate semiconductor devices having a metal nitride layer | Gil-Heyun Choi, Jong Ho Lee, Byung-Hee Kim | 2004-11-09 |