Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12286707 | Apparatus for manufacturing semiconductor device | Whankyun Kim, Jeongheon Park, Junho Jeong | 2025-04-29 |
| 11942128 | Magnetic memory device | Whankyun Kim, Jeong-Heon Park, Heeju Shin, Youngjun CHO, Junho Jeong | 2024-03-26 |
| 11834738 | Sputtering apparatus and method of fabricating magnetic memory device using the same | Whankyun Kim, Eunsun Noh, Jeong-Heon Park, Junho Jeong | 2023-12-05 |
| 11730064 | Magnetic memory device | Sung-chul Lee, Whankyun Kim, Junho Jeong | 2023-08-15 |
| 11535930 | Sputtering apparatus and method of fabricating magnetic memory device using the same | Whankyun Kim, Eunsun Noh, Jeong-Heon Park, Junho Jeong | 2022-12-27 |
| 11127786 | Magnetic memory device | Whankyun Kim, Jeong-Heon Park, Woo Chang Lim, Junho Jeong | 2021-09-21 |
| 10910552 | Magnetic memory device, method for manufacturing the same, and substrate treating apparatus | Yong-Sung Park, Jeong-Heon Park, Hyun Chang Cho, Ung Hwan Pi | 2021-02-02 |
| 10862025 | Magnetic memory devices | Ung Hwan Pi, Eunsun Noh, Yong-Sung Park | 2020-12-08 |
| 10629807 | Process control method and process control system for manufacturing semiconductor device | Jeong-Heon Park, Yong-Sung Park, Hyun-Sang Cho, Se-Chung Oh | 2020-04-21 |
| 10553790 | Method of manufacuring a magnetic memory device | Ung Hwan Pi, Eunsun Noh, Yong-Sung Park | 2020-02-04 |
| 10147873 | Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same | Youngman Jang, Kiwoong Kim, Yongsung Park | 2018-12-04 |
| 9985200 | Magnetic memory devices including oxidized non-magnetic patterns with non-metallic elements and methods of fabricating the same | Whankyun Kim, Eunsun Noh | 2018-05-29 |
| 9934950 | Sputtering apparatuses and methods of manufacturing a magnetic memory device using the same | Woojin Kim | 2018-04-03 |
| 9923138 | Magnetic memory device and method for manufacturing the same | Sang Hwan Park, Kwangseok KIM, Keewon Kim, Jae Hoon Kim | 2018-03-20 |
| 9905753 | Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same | Youngman Jang, Kiwoong Kim, Yongsung Park | 2018-02-27 |
| 9859488 | Magnetic memory device and method of manufacturing the same | Kwangseok KIM, Ki Woong Kim, Whankyun Kim, Sang Hwan Park | 2018-01-02 |
| 9842987 | Magnetic tunnel junction memory devices including crystallized boron-including first magnetic layer on a tunnel barrier layer and lower boron-content second magnetic layer on the first magnetic layer | Sechung Oh | 2017-12-12 |
| 9842637 | Magnetic memory device and method of fabricating the same | Ki Woong Kim, Juhyun Kim, Yong-Sung Park, Sechung Oh, Woo Chang Lim | 2017-12-12 |
| 9831422 | Magnetic memory devices having perpendicular magnetic tunnel junction | Woojin Kim, Yong-Sung Park, Stuart S.P. Parkin | 2017-11-28 |
| 9660187 | Methods of forming a layer and methods of manufacturing magnetic memory devices using the same | Yong-Sung Park, Ki Woong Kim, Juhyun Kim, Sechung Oh | 2017-05-23 |
| 9640755 | Magnetic memory device and method of manufacturing the same | Kwangseok KIM, Ki Woong Kim, Whankyun Kim, Sang Hwan Park | 2017-05-02 |
| 9543505 | Magnetic memory device and method for manufacturing the same | Sang Hwan Park, Kwangseok KIM, Keewon Kim, Jae Hoon Kim | 2017-01-10 |
| 9203014 | Magnetic memory devices having junction magnetic layers and buffer layers and related methods | Yunjae Lee, Woojin Kim | 2015-12-01 |
| 9184376 | Memory devices and methods of manufacturing the same | Sang Hwan Park, Soonoh Park, Sangyong Kim | 2015-11-10 |