Issued Patents All Time
Showing 26–43 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7332386 | Methods of fabricating fin field transistors | Chul Lee, Min Sang Kim, Dong-Gun Park, Choong-Ho Lee, Chang-Woo Oh +4 more | 2008-02-19 |
| 7321144 | Semiconductor device employing buried insulating layer and method of fabricating the same | Chang-Woo Oh, Dong-Gun Park, Kyoung-Hwan Yeo | 2008-01-22 |
| 7285466 | Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels | Sung Min Kim, Dong Won Kim, Eun-Jung Yun, Dong-Gun Park, Sung-Young Lee +2 more | 2007-10-23 |
| 7265011 | Method of manufacturing a transistor | Jae-Man Yoon, Dong-Gun Park, Makoto Yoshida, Gyo-young Jin, Sang Yeon Han | 2007-09-04 |
| 7265031 | Methods of fabricating semiconductor-on-insulator (SOI) substrates and semiconductor devices using sacrificial layers and void spaces | Chang-Woo Oh, Dong-Gun Park, Sung-Young Lee | 2007-09-04 |
| 7247896 | Semiconductor devices having a field effect transistor and methods of fabricating the same | Chang-Woo Oh, Dong-Gun Park, Dong Won Kim | 2007-07-24 |
| 7214987 | Semiconductor device having two different operation modes employing an asymmetrical buried insulating layer and method for fabricating the same | Chang-Woo Oh, Dong-Gun Park, Sung-Young Lee | 2007-05-08 |
| 7154154 | MOS transistors having inverted T-shaped gate electrodes | Shin-Ae Lee, Dong-Gun Park, Chang-Sub Lee, Sung Min Kim, Seong-Ho Kim | 2006-12-26 |
| 7148527 | Semiconductor devices with enlarged recessed gate electrodes | Seong-Ho Kim, Chang-Sub Lee, Sung Min Kim, Shin-Ae Lee, Dong-Gun Park | 2006-12-12 |
| 7132349 | Methods of forming integrated circuits structures including epitaxial silicon layers in active regions | Sung Min Kim, Dong-Gun Park, Chang-Sub Lee, Shin-Ae Lee, Seong-Ho Kim | 2006-11-07 |
| 7122431 | Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions | Sung Min Kim, Dong-Gun Park, Sung-Young Lee, Hye-Jin Cho, Eun-Jung Yun +2 more | 2006-10-17 |
| 7071517 | Self-aligned semiconductor contact structures and methods for fabricating the same | Seong-Ho Kim, Dong-Gun Park, Chang-Sub Lee, Sung Min Kim, Shin-Ae Lee | 2006-07-04 |
| 7026688 | Field effect transistors having multiple stacked channels | Sung Min Kim, Dong-Gun Park, Chang-Sub Lee, Shin-Ae Lee, Seong-Ho Kim | 2006-04-11 |
| 7015549 | Integrated circuit structures including epitaxial silicon layers that extend from an active region through an insulation layer to a substrate | Sung Min Kim, Dong-Gun Park, Chang-Sub Lee, Shin-Ae Lee, Seong-Ho Kim | 2006-03-21 |
| 7002207 | Field effect transistors having multiple stacked channels | Sung Min Kim, Dong-Gun Park, Chang-Sub Lee, Shin-Ae Lee, Seong-Ho Kim | 2006-02-21 |
| 6951785 | Methods of forming field effect transistors including raised source/drain regions | Chang-Woo Oh, Dong-Gun Park, Chang-Sub Lee | 2005-10-04 |
| 6940129 | Double gate MOS transistors | Sung Min Kim, Dong-Gun Park, Chang-Sub Lee, Shin-Ae Lee, Seong-Ho Kim | 2005-09-06 |
| 6271108 | Method of forming a contact in semiconductor device | — | 2001-08-07 |