Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11557504 | Semiconductor device including isolation layers and method of manufacturing the same | Sung-Dae Suk, Sang Hoon Lee, Masuoka Sadaaki | 2023-01-17 |
| 11101166 | Semiconductor device including isolation layers and method of manufacturing the same | Sung-Dae Suk, Sang Hoon Lee, Masuoka Sadaaki | 2021-08-24 |
| 10734273 | Semiconductor device including isolation layers and method of manufacturing the same | Sung-Dae Suk, Sang Hoon Lee, Masuoka Sadaaki | 2020-08-04 |
| 10396205 | Integrated circuit device | Mun Hyeon Kim, Sung Man WHANG, Chang Woo Noh, Dong Won Kim | 2019-08-27 |
| 9831240 | Elevated source drain semiconductor device with L-shaped spacers and fabricating method thereof | Min-Yeop Park, Leonelli Daniele, Shigenobu Maeda, Woong-Gi Kim, Jong-Hyuk Lee +1 more | 2017-11-28 |
| 9576959 | Semiconductor device having first and second gate electrodes and method of manufacturing the same | Yaoqi Dong, Mun Hyeon Kim, Keun Hwi Cho, Shigenobu Maeda | 2017-02-21 |
| 7611956 | Semiconductor device having MOS varactor and methods for fabricating the same | Dae Hyun Kim | 2009-11-03 |
| 7307335 | Semiconductor device having MOS varactor and methods for fabricating the same | Dae Hyun Kim | 2007-12-11 |
| 7078775 | MOS transistor having a mesh-type gate electrode | Duk-Min Yi, Chul Chung | 2006-07-18 |
| 7049218 | Method of fabricating local interconnection using selective epitaxial growth | Jin Ho Choi | 2006-05-23 |
| 6613633 | Method for manufacturing a high power semiconductor device having a field plate extendedly disposed on a gate | — | 2003-09-02 |
| 6476457 | Semiconductor device with drift layer | — | 2002-11-05 |
| 6448611 | High power semiconductor device and fabrication method thereof | — | 2002-09-10 |
| 6177321 | Semiconductor device and fabrication method thereof | — | 2001-01-23 |
| 5953602 | EEPROM cell and related method of making thereof | Jang Han Kim | 1999-09-14 |
| 5736765 | EEPROM cell having improved topology and reduced leakage current | Jang Han Kim | 1998-04-07 |