Issued Patents All Time
Showing 51–75 of 133 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7618864 | Nonvolatile memory device and methods of forming the same | Chang-Woo Oh, Sung Hwan Kim, Dong Won Kim | 2009-11-17 |
| 7615429 | Methods of fabricating field effect transistors having multiple stacked channels | Sung Min Kim, Chang-Sub Lee, Jeong-Dong Choe, Shin-Ae Lee, Seong-Ho Kim | 2009-11-10 |
| 7601592 | Method for forming multi-gate non-volatile memory devices using a damascene process | Chang-Woo Oh, Dong Won Kim, Yong-Kyu Lee | 2009-10-13 |
| 7602010 | Multi-bit multi-level non-volatile memory device and methods of operating and fabricating the same | Byung Yong Choi, Tae-Yong Kim, Eun-Suk Cho, Suk-Kang Sung, Hye-Jin Cho +1 more | 2009-10-13 |
| 7586149 | Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same | Jae-Man Yoon, Kang Yoon Lee, Choong-Ho Lee, Bong-Soo Kim, Seong-Goo Kim +2 more | 2009-09-08 |
| 7579648 | Semiconductor device having a channel pattern and method of manufacturing the same | Jae-Man Yoon, Choong-Ho Lee, Chul-woo Lee | 2009-08-25 |
| 7575964 | Semiconductor device employing buried insulating layer and method of fabricating the same | Chang-Woo Oh, Jeong-Dong Choe, Kyoung-Hwan Yeo | 2009-08-18 |
| 7566619 | Methods of forming integrated circuit devices having field effect transistors of different types in different device regions | Young-Joon Ahn, Choong-Ho Lee, Hee-Soo Kang | 2009-07-28 |
| 7566929 | Nonvolatile memory devices having floating gate electrodes with nitrogen-doped layers on portions thereof | Chang-Hyun Lee | 2009-07-28 |
| 7560759 | Semiconductor device and method of manufacturing the same | Hee-Soo Kang, Jae-Man Yoon, Sang Yeon Han, Young-Joon Ahn, Choong-Ho Lee | 2009-07-14 |
| 7541656 | Semiconductor devices with enlarged recessed gate electrodes | Seong-Ho Kim, Chang-Sub Lee, Jeong-Dong Choe, Sung Min Kim, Shin-Ae Lee | 2009-06-02 |
| 7541645 | Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions | Sung Min Kim, Sung-Young Lee, Hye-Jin Cho, Eun-Jung Yun, Shin-Ae Lee +2 more | 2009-06-02 |
| 7534707 | MOS Transistors having inverted T-shaped gate electrodes and fabrication methods thereof | Shin-Ae Lee, Chang-Sub Lee, Jeong-Dong Choe, Sung Min Kim, Seong-Ho Kim | 2009-05-19 |
| 7531412 | Methods of manufacturing semiconductor memory devices including a vertical channel transistor | Jae-Man Yoon, Choong-Ho Lee, Moon-suk Yi, Chul-woo Lee | 2009-05-12 |
| 7528022 | Method of forming fin field effect transistor using damascene process | Young-Joon Ahn, Choong-Ho Lee, Hee-Soo Kang | 2009-05-05 |
| 7521766 | Transistor and method of forming the same | Jae-Man Yoon, Choong-Ho Lee, Chul-woo Lee | 2009-04-21 |
| 7514325 | Fin-FET having GAA structure and methods of fabricating the same | Suk-pil Kim, Jae-woong Hyun, Yoon-dong Park, Won-joo Kim, Choong-Ho Lee | 2009-04-07 |
| 7511358 | Nonvolatile memory device having multi-bit storage and method of manufacturing the same | Byung Yong Choi, Choong-Ho Lee | 2009-03-31 |
| 7511998 | Non-volatile memory device and method of fabricating the same | Sung-Young Lee, Dong Won Kim, Min Sang Kim, Eun-Jung Yun | 2009-03-31 |
| 7510932 | Semiconductor devices having a field effect transistor and methods of fabricating the same | Chang-Woo Oh, Dong Won Kim, Jeong-Dong Choe | 2009-03-31 |
| 7473963 | Metal oxide semiconductor (MOS) transistors having three dimensional channels | Sung Min Kim, Dong Won Kim, Eun-Jung Yun, Sung-Young Lee, Jeong-Dong Choe +2 more | 2009-01-06 |
| 7465985 | Non-volatile memory device and methods of forming the same | Byung Yong Choi, Choong-Ho Lee | 2008-12-16 |
| 7445994 | Methods of forming non-volatile memory devices using selective nitridation techniques | Chang-Hyun Lee | 2008-11-04 |
| 7420244 | Semiconductor device having a fin structure and method of manufacturing the same | Jae-Man Yoon, Choong-Ho Lee, Chul-woo Lee | 2008-09-02 |
| 7419859 | Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions | Suk-pil Kim, Yoon-dong Park, Won-joo Kim, Eun-Suk Cho, Suk-Kang Sung +3 more | 2008-09-02 |