BJ

Byung-Gil Jeon

Samsung: 48 patents #1,974 of 75,807Top 3%
📍 Seoul, KR: #895 of 39,741 inventorsTop 3%
Overall (All Time): #58,672 of 4,157,543Top 2%
48
Patents All Time

Issued Patents All Time

Showing 26–48 of 48 patents

Patent #TitleCo-InventorsDate
7075812 Ferroelectric random access memory device and control method thereof Byung-Jun Min 2006-07-11
6967860 Ferroelectric memory device and control method thereof Mun-Kyu Choi, Byung-Jun Min, Ki-Nam Kim 2005-11-22
6961271 Memory device in which memory cells having complementary data are arranged Ki-Nam Kim, Mun-Kyu Choi 2005-11-01
6914836 Sense amplifier circuits using a single bit line input Mun-Kyu Choi 2005-07-05
6847537 Ferroelectric memory devices having a plate line control circuit and methods for operating the same Ki-Nam Kim 2005-01-25
6594174 Method for sensing data stored in a ferroelectric random access memory device Mun-Kyu Choi, Ki-Nam Kim 2003-07-15
6504749 Ferroelectric memory devices with memory cells in a row connected to different plate lines 2003-01-07
6504748 Ferroelectric random access memory device Mun-Kyu Choi 2003-01-07
6496426 Redundancy circuit of semiconductor memory device Ki-Nam Kim 2002-12-17
6407943 Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device Mun-Kyu Choi 2002-06-18
6392916 Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device Mun-Kyu Choi 2002-05-21
6385078 Ferroelectric random access memory (FRAM) device and method for controlling read/write operations thereof 2002-05-07
6295223 Ferroelectric random access memory with a memory with a stable sensing margin Mun-Kyu Choi 2001-09-25
6215693 Methods of operating ferroelectric memory devices having reconfigurable bit lines Yeon-Bae Chung 2001-04-10
6201727 Nonvolatile ferroelectric random access memory device with segmented plate line scheme and a method for driving a plate line segment therein 2001-03-13
6097624 Methods of operating ferroelectric memory devices having reconfigurable bit lines Yeon-Bae Chung 2000-08-01
6088257 Ferroelectric random access memory device and method for operating the same Yeon-Bae Chung 2000-07-11
5991188 Non-volatile ferroelectric memory with section plate line drivers and method for accessing the same Yeon-Bae Chung 1999-11-23
5978250 Ferroelectric memory devices having reconfigurable bit lines and methods of operating same Yeon-Bae Chung 1999-11-02
5943257 Ferroelectric memory device and data protection method thereof Yeon-Bae Chung 1999-08-24
5835399 Imprint compensation circuit for use in ferroelectric semiconductor memory device 1998-11-10
5835400 Ferroelectric memory devices having nondestructive read capability and methods of operating same Chul-Sung Park 1998-11-10
5805012 Systems and methods for compensating a buffer for power supply fluctuation Chul-Sung Park 1998-09-08