Issued Patents All Time
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| RE49525 | Semiconductor device having gate electrode with spacers on fin structure and silicide layer filling the recess | Dong Il Bae, Yong-Min Cho | 2023-05-09 |
| 9653551 | Field effect transistors including fin structures with different doped regions and semiconductor devices including the same | Changwoo Oh, Myung Gil Kang, Jongshik Yoon | 2017-05-16 |
| 9525036 | Semiconductor device having gate electrode with spacers on fin structure and silicide layer filling the recess | Dong Il Bae, Yong-Min Cho | 2016-12-20 |