Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9910729 | Restoring ECC syndrome in non-volatile memory devices | Amichai Givant, Yoav Yogev, Amit Shefi | 2018-03-06 |
| 9543017 | End-of-life reliability for non-volatile memory cells | Alexander Kushnarenko | 2017-01-10 |
| 9490261 | Minimizing disturbs in dense non volatile memory arrays | Amichai Givant, Boaz Eitan | 2016-11-08 |
| 9081710 | Restoring ECC syndrome in non-volatile memory devices | Amichai Givant, Yoav Yogev, Amit Shefi | 2015-07-14 |
| 8264884 | Methods, circuits and systems for reading non-volatile memory cells | Eduardo Maayan | 2012-09-11 |
| 7804126 | Dense non-volatile memory array and method of fabrication | Boaz Eitan, Rustom Irani | 2010-09-28 |
| 7786512 | Dense non-volatile memory array and method of fabrication | Boaz Eitan, Rustom Irani | 2010-08-31 |
| 7652930 | Method, circuit and system for erasing one or more non-volatile memory cells | Assaf Shappir, Boaz Eitan | 2010-01-26 |
| 7638835 | Double density NROM with nitride strips (DDNS) | Rustom Irani, Boaz Eitan, Assaf Shappir | 2009-12-29 |
| 7317633 | Protection of NROM devices from charge damage | Eli Lusky, Assaf Shappir, Boaz Eitan | 2008-01-08 |
| 7098107 | Protective layer in memory device and method therefor | Boaz Ettan | 2006-08-29 |
| 6829172 | Programming of nonvolatile memory cells | Boaz Eitan, Zeev Cohen, David Finzi, Eduardo Maayan | 2004-12-07 |
| 6627555 | Method and circuit for minimizing the charging effect during manufacture of semiconductor devices | Boaz Eitan | 2003-09-30 |
| 6614692 | EEPROM array and method for operation thereof | Ron Eliyahu, Eduardo Maayan, Boaz Eitan | 2003-09-02 |
| 6490204 | Programming and erasing methods for a reference cell of an NROM array | Eduardo Maayan, Boaz Eitan | 2002-12-03 |
| 6396741 | Programming of nonvolatile memory cells | Boaz Eitan, Zeev Cohen, David Finzi, Eduardo Maayan | 2002-05-28 |
| 6337502 | Method and circuit for minimizing the charging effect during manufacture of semiconductor devices | Boaz Eitan | 2002-01-08 |