GJ

Gordon C. Godejahn, Jr.

RI Rockwell International: 8 patents #60 of 2,155Top 3%
📍 Santa Ana, CA: #165 of 1,362 inventorsTop 15%
🗺 California: #73,997 of 386,348 inventorsTop 20%
Overall (All Time): #671,696 of 4,157,543Top 20%
8
Patents All Time

Issued Patents All Time

Showing 1–8 of 8 patents

Patent #TitleCo-InventorsDate
4587711 Process for high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines 1986-05-13
4506437 Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines 1985-03-26
4477962 Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines 1984-10-23
4455737 Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines 1984-06-26
4277881 Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines 1981-07-14
4221044 Self-alignment of gate contacts at local or remote sites Gary L. Heimbigner 1980-09-09
4221045 Self-aligned contacts in an ion implanted VLSI circuit 1980-09-09
4192059 Process for and structure of high density VLSI circuits, having inherently self-aligned gates and contacts for FET devices and conducting lines Mahboob Khan, Gary L. Heimbigner, Noubar A. Aghishian 1980-03-11