YS

Yoshimi Sudou

RT Renesas Technology: 6 patents #492 of 3,337Top 15%
HI Hitachi: 4 patents #8,942 of 28,497Top 35%
Overall (All Time): #519,911 of 4,157,543Top 15%
10
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
7692234 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device Tetsuo Adachi, Masataka Kato, Toshiaki Nishimoto, Nozomu Matsuzaki, Takashi Kobayashi +1 more 2010-04-06
7528036 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device Tetsuo Adachi, Masataka Kato, Toshiaki Nishimoto, Nozomu Matsuzaki, Takashi Kobayashi +1 more 2009-05-05
7304345 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device Tetsuo Adachi, Masataka Kato, Toshiaki Nishimoto, Nozomu Matsuzaki, Takashi Kobayashi +1 more 2007-12-04
7195976 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device Tetsuo Adachi, Masataka Kato, Toshiakl Nishimoto, Nozomu Matsuzaki, Takashi Kobayashi +1 more 2007-03-27
7179711 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device Tetsuo Adachi, Toshiyuki Mine 2007-02-20
7141475 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device Tetsuo Adachi, Masataka Kato, Toshiaki Nishimoto, Nozomu Matsuzaki, Takashi Kobayashi +1 more 2006-11-28
6461916 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making the device Tetsuo Adachi, Masataka Kato, Toshiakl Nishimoto, Nozomu Matsuzaki, Takashi Kobayashi +1 more 2002-10-08
6444554 Method of making a non-volatile memory and semiconductor device Tetsuo Adachi, Masataka Kato, Toshiakl Nishimoto, Nozomu Matsuzaki, Takashi Kobayashi +1 more 2002-09-03
6194763 Semiconductor device having SOI-MOSFET Dai Hisamoto 2001-02-27
6060750 Semiconductor device having SOI-MOSFET Dai Hisamoto 2000-05-09