| 12394759 |
Semiconductor device and circuit device |
Yasutaka Nakashiba, Kazuhisa Mori, Toshiyuki Hata |
2025-08-19 |
| 12125905 |
Semiconductor device |
Yoshinori Kaya, Katsumi Eikyu, Akihiro Shimomura, Kazuhisa Mori |
2024-10-22 |
| 11557648 |
Semiconductor device and method of manufacturing the same |
Katsumi Eikyu, Masami Sawada, Akihiro Shimomura, Kazuhisa Mori |
2023-01-17 |
| 11362207 |
Semiconductor device |
Atsushi Sakai, Satoru TOKUDA, Ryuuji Umemoto, Katsumi Eikyu |
2022-06-14 |
| 11004749 |
Semiconductor device and method of manufacturing the same |
Taro Moriya, Kazuhisa Mori |
2021-05-11 |
| 10763336 |
Semiconductor device and method for manufacturing the same |
— |
2020-09-01 |
| 10529846 |
Semiconductor device and method of manufacturing the same |
Taro Moriya, Hiroyoshi KUDOU |
2020-01-07 |
| 10250255 |
Semiconductor device and circuit arrangement using the same |
— |
2019-04-02 |
| 9960269 |
Semiconductor device and method of manufacturing the same |
Hiroyoshi KUDOU |
2018-05-01 |
| 9698773 |
Semiconductor device |
— |
2017-07-04 |
| 7884421 |
Semiconductor device and method of manufacturing the same |
— |
2011-02-08 |
| 7733133 |
Power switch circuit having variable resistor coupled between input terminal and output transistor and changing its resistance based on state of output transistor |
Masaki Kojima |
2010-06-08 |
| 7439795 |
Charge pump circuit with reduced parasitic capacitance |
Masayuki Ida, Kazunori Doi |
2008-10-21 |
| 7400163 |
Dead time control circuit capable of adjusting temperature characteristics of dead time |
Mitsuru Yoshida |
2008-07-15 |
| 6384453 |
High withstand voltage diode and method for manufacturing same |
— |
2002-05-07 |
| 6002158 |
High breakdown-voltage diode with electric-field relaxation region |
— |
1999-12-14 |
| 5767556 |
Field effect transistor |
— |
1998-06-16 |
| 5596216 |
Semiconductor device with diode and capable of device protection |
— |
1997-01-21 |
| 5523601 |
High-breakdown-voltage MOS transistor |
— |
1996-06-04 |