Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9905666 | Trench schottky rectifier device and method for manufacturing the same | Mei-Ling Chen | 2018-02-27 |
| 9865700 | MOS P-N junction diode with enhanced response speed and manufacturing method thereof | Mei-Ling Chen | 2018-01-09 |
| 9853120 | Trench Schottky rectifier device and method for manufacturing the same | Mei-Ling Chen | 2017-12-26 |
| 9595617 | MOS P-N junction diode with enhanced response speed and manufacturing method thereof | Mei-Ling Chen | 2017-03-14 |
| 9536976 | Trench schottky rectifier device and method for manufacturing the same | Mei-Ling Chen | 2017-01-03 |
| 9362350 | MOS P-N junction diode with enhanced response speed and manufacturing method thereof | Mei-Ling Chen | 2016-06-07 |
| 9240470 | High-performance reverse-conduction field-stop (RCFS) insulated gate bipolar transistor and method for manufacturing the same | Mei-Ling Chen, Yi-Lun Hsia, Chung-Chen CHANG | 2016-01-19 |
| 9219170 | Trench schottky rectifier device and method for manufacturing the same | Kou-Liang Chao, Mei-Ling Chen, Tse-Chuan Su | 2015-12-22 |
| 9064904 | MOS P-N junction Schottky diode device and method for manufacturing the same | — | 2015-06-23 |
| 9029235 | Trench isolation MOS P-N junction diode device and method for manufacturing the same | Mei-Ling Chen, Kuo-Liang Chao | 2015-05-12 |
| 8993427 | Method for manufacturing rectifier with vertical MOS structure | Mei-Ling Chen | 2015-03-31 |
| 8927401 | Trench Schottky diode and method for manufacturing the same | Kou-Liang Chao, Tse-Chuan Su, Mei-Ling Chen | 2015-01-06 |
| 8921949 | MOS P-N junction diode with enhanced response speed and manufacturing method thereof | Kou-Liang Chao, Tse-Chuan Su, Mei-Ling Chen | 2014-12-30 |
| 8890279 | Trench Schottky rectifier device and method for manufacturing the same | Kou-Liang Chao, Mei-Ling Chen, Tse-Chuan Su | 2014-11-18 |
| 8853748 | Rectifier with vertical MOS structure | Kuo-Liang Chao, Mei-Ling Chen | 2014-10-07 |
| 8809946 | Wide trench termination structure for semiconductor device | Mei-Ling Chen, Kuo-Liang Chao | 2014-08-19 |
| 8796808 | MOS P-N junction schottky diode device and method for manufacturing the same | Kuo-Liang Chao, Tse-Chuan Su | 2014-08-05 |
| 8753963 | Manufacturing method of multi-trench termination structure for semiconductor device | Lung-Ching Kao, Mei-Ling Chen, Kuo-Liang Chao | 2014-06-17 |
| 8735228 | Trench isolation MOS P-N junction diode device and method for manufacturing the same | Mei-Ling Chen, Kuo-Liang Chao | 2014-05-27 |
| 8728878 | MOS P-N junction diode device and method for manufacturing the same | Kuo-Liang Chao, Tse-Chuan Su | 2014-05-20 |
| 8704298 | MOS diode with termination structure and method for manufacturing the same | Kuo-Liang Chao, Mei-Ling Chen, Lung-Ching Kao | 2014-04-22 |
| 8680590 | Multi-trench termination structure for semiconductor device | Lung-Ching Kao, Mei-Ling Chen, Kuo-Liang Chao | 2014-03-25 |
| 8664701 | Rectifier with vertical MOS structure | Kuo-Liang Chao, Mei-Ling Chen | 2014-03-04 |
| 8618626 | Trench Schottky rectifier device and method for manufacturing the same | Kou-Liang Chao, Mei-Ling Chen, Tse-Chuan Su | 2013-12-31 |
| 8558315 | Trench isolation MOS P-N junction diode device and method for manufacturing the same | Mei-Ling Chen, Kou-Liang Chao | 2013-10-15 |