SL

Stephen Lam

PS Pdf Solutions: 86 patents #12 of 143Top 9%
HL Hrl Laboratories: 1 patents #490 of 709Top 70%
📍 Fremont, CA: #94 of 9,298 inventorsTop 2%
🗺 California: #2,909 of 386,348 inventorsTop 1%
Overall (All Time): #19,174 of 4,157,543Top 1%
87
Patents All Time

Issued Patents All Time

Showing 26–50 of 87 patents

Patent #TitleCo-InventorsDate
10199289 Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one chamfer short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective chamfer short, corner short, and via open test areas Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2019-02-05
10199290 Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2019-02-05
10199294 Method for processing a semiconductor wafer using non-contact electrical measurements indicative of a least one side-to-side short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective side-to-side short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2019-02-05
10109539 Integrated circuit including NCEM-enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-10-23
10096530 Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-10-09
10096529 Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including metal island open configured fill cells Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-10-09
9984944 Integrated circuit containing DOEs of GATECNT-tip-to-side-short-configured, NCEM-enabled fill cells Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-05-29
9953889 Process for making semiconductor dies, chips, and wafers using non-contact measurements obtained from DOEs of NCEM-enabled fill cells on test wafers that include multiple means/steps for enabling NC detection of GATECNT-GATE via opens Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-04-24
9947601 Integrated circuit including NCEM-enabled, side-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-04-17
9929136 Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-Enabled fill cells, with the first DOE including tip-to-side short configured fill cells, and the second DOE including chamfer short configured fill cells Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-03-27
9929063 Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-03-27
9922890 Integrated circuit including NCEM-enabled, snake-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-03-20
9922968 Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including chamfer short configured fill cells Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-03-20
9911669 Integrated circuit including NCEM-enabled, diagonal gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-03-06
9911670 Integrated circuit including NCEM-enabled, via-open/resistance-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gate Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-03-06
9911649 Process for making and using mesh-style NCEM pads Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-03-06
9911668 Integrated circuit including NCEM-enabled, corner gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-03-06
9905487 Process for making semiconductor dies, chips, and wafers using non-contact measurements obtained from DOEs of NCEM-enabled fill cells on test wafers that include multiple means/steps for enabling NC detection of V0 via opens Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-02-27
9905553 Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-02-27
9899276 Process for making an integrated circuit that includes NCEM-enabled, interlayer overlap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-02-20
9881843 Integrated circuit including NCEM-Enabled, tip-to-tip gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-01-30
9870962 Integrated circuit including NCEM-enabled, interlayer overlap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-01-16
9870966 Process for making semiconductor dies, chips and wafers using non-contact measurements obtained from DOEs of NCEM-enabled fill cells on test wafers that include multiple means/steps for enabling NC detection of AACNT-TS via opens Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-01-16
9871028 Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including tip-to-tip short configured fill cells, and the second DOE including chamfer short configured fill cells Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-01-16
9865583 Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more 2018-01-09