ID

Indranil De

PS Pdf Solutions: 92 patents #5 of 143Top 4%
IN Intermolecular: 16 patents #43 of 248Top 20%
KL Kla-Tencor: 4 patents #809 of 1,394Top 60%
EM Elpida Memory: 2 patents #267 of 692Top 40%
📍 Alameda, CA: #3 of 1,067 inventorsTop 1%
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115
Patents All Time

Issued Patents All Time

Showing 26–50 of 115 patents

Patent #TitleCo-InventorsDate
10199294 Method for processing a semiconductor wafer using non-contact electrical measurements indicative of a least one side-to-side short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective side-to-side short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2019-02-05
10199288 Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one side-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective side-to-side short, corner short, and via open test areas Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2019-02-05
10199286 Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and corner short test areas Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2019-02-05
10199285 Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one side-to-side short or leakages, and at least one via respective tip-to-tip short, side-to-side short, and via open test areas Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2019-02-05
10199284 Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one chamfer short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and chamfer short test areas Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2019-02-05
10199283 Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2019-02-05
10109539 Integrated circuit including NCEM-enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-10-23
10096530 Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-10-09
10096529 Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including metal island open configured fill cells Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-10-09
9984944 Integrated circuit containing DOEs of GATECNT-tip-to-side-short-configured, NCEM-enabled fill cells Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-05-29
9953889 Process for making semiconductor dies, chips, and wafers using non-contact measurements obtained from DOEs of NCEM-enabled fill cells on test wafers that include multiple means/steps for enabling NC detection of GATECNT-GATE via opens Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-04-24
9947601 Integrated circuit including NCEM-enabled, side-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-04-17
9929136 Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-Enabled fill cells, with the first DOE including tip-to-side short configured fill cells, and the second DOE including chamfer short configured fill cells Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-03-27
9929063 Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-03-27
9922968 Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including chamfer short configured fill cells Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-03-20
9922890 Integrated circuit including NCEM-enabled, snake-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-03-20
9911670 Integrated circuit including NCEM-enabled, via-open/resistance-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gate Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-03-06
9911669 Integrated circuit including NCEM-enabled, diagonal gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-03-06
9911668 Integrated circuit including NCEM-enabled, corner gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-03-06
9911649 Process for making and using mesh-style NCEM pads Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-03-06
9905553 Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-02-27
9905487 Process for making semiconductor dies, chips, and wafers using non-contact measurements obtained from DOEs of NCEM-enabled fill cells on test wafers that include multiple means/steps for enabling NC detection of V0 via opens Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-02-27
9899276 Process for making an integrated circuit that includes NCEM-enabled, interlayer overlap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-02-20
9881843 Integrated circuit including NCEM-Enabled, tip-to-tip gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more 2018-01-30
9879357 Methods and systems for thin film deposition processes 2018-01-30