Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Programming non-volatile storage using binary and multi-state programming processes

Programming non-volatile storage using binary and multi-state programming processes

US Patent RE46995 · Granted Aug 14, 2018

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Dynamic and adaptive optimization of read compare levels based on memory cell th2019
Programming of nonvolatile memory with verify level dependent on memory state an2018
Three dimensional non-volatile memory with separate source lines2018
Three dimensional non-volatile memory with shorting source line/bit line pairs2018
Simultaneous multi-state read or verify in non-volatile storage2017
Reducing energy consumption when applying body bias to substrate having sets of 2017
Three dimensional non-volatile memory with current sensing programming status2017
Dynamic adjustment of read voltage levels based on memory cell threshold voltage2017
Dynamic adjustment of read voltage levels based on memory cell threshold voltage2017
Read operation for non-volatile storage with compensation for coupling2017
Operation for non-volatile storage system with shared bit lines2015
Dynamic adjustment of read voltage levels based on memory cell threshold voltage2015