Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for pulling a single crystal composed of silicon from a melt contained in a crucible, and single crystal produced thereby

Method for pulling a single crystal composed of silicon from a melt contained in a crucible, and single crystal produced thereby

US Patent 9988739 · Granted Jun 5, 2018

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Protected electrode structures2024
Protected electrode structures2020
Electrochemical gas sensors with ionic liquid electrolyte systems2018
Methods and devices for detection of the concentration of at least one gaseous t2018
Polycrystalline silicon rod and process for production thereof2016
Electrochemical gas sensors with ionic liquid electrolyte systems2015
Polycrystalline silicon rod and process for production thereof2015
Electrochemical sensor with diffusion labyrinth2014
Method for producing semiconductor wafers composed of silicon with reduced pinho2014
Semiconductor wafer composed of monocrystalline silicon and method for producing2013
Epitaxial wafer and production method thereof2012
Semiconductor wafers of silicon and method for their production2012