Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating nonpolar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same

Method of fabricating nonpolar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same

US Patent 9966497 · Granted May 8, 2018

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Light emitting device for display and unit pixel having the same2025
Single chip multi band LED and application thereof2025
Single chip multi band LED2024
Single chip multi band LED2024
Light emitting device for display and unit pixel having the same2024
Light emitting diode having side reflection layer2024
Single chip multi band led and application thereof2023
Group III-V light emitting diode2023
Method of fabricating a light emitting device having a stacked structure2023
Light emitting device for display and unit pixel having the same2023
Single chip multi band led and application thereof2023
Single chip multi band LED2023