Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage current

Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage current

US Patent 9966429 · Granted May 8, 2018

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Hand tool capable of switching operating direction2025
Lead frame with conductive clip for mounting a semiconductor die with reduced cl2018
Gallium nitride power semiconductor device having a vertical structure2016
Zener diode having a polysilicon layer for improved reverse surge capability and2016
Zener diode having a polysilicon layer for improved reverse surge capability and2016
Zener diode having a polysilicon layer for improved reverse surge capability and2016
Zener diode having a polysilicon layer for improved reverse surge capability and2016
Zener diode having a polysilicon layer for improved reverse surge capability and2016
GaN-based schottky diode having large bond pads and reduced contact resistance2016
Zener diode haviing a polysilicon layer for improved reverse surge capability an2015
Zener diode haviing a polysilicon layer for improved reverse surge capability an2015
Zener diode haviing a polysilicon layer for improved reverse surge capability an2015